Browsing by Author "Cha, TS"

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Characteristics of fluorine implantation for HfO2 gate dielectrics with high-temperature postdeposition annealing
(2006-04-01)
Lai, CS
;
Wu, WC
;
Wang, JC
;
Cha, TS
;
物理研究所
In this work, we describe the characteristics of silicon surface fluorine implantation (SSFI) for HFO2 films with high-temperature postdeposition annealing. The thermal stability of HfO2 gate dielectrics is much improved owing to the incorporation of fluorine into HfO2 thin films. The gate leakage current of the SSFI HfO2 films is about three orders less than that of samples without any fluorine implantation. In addition, improvements in stress-induced leakage current (SILC) and charge trapping characteristics are realized in the HfO2 films with the SSFI. The incorporation of fluorine atoms into the HfO2 films reduces not only interface dangling bonds but also bulk traps, which is responsible for the improvements in properties.
Determination of ultrathin oxide thickness by subthreshold swing
(2002-05-01)
Cha, TS
;
電子物理學系
;
Department of Electrophysics
Thickness determination of ultrathin oxide by the subthreshold swing has bee developed. From the experimental result, oxide thickness in the range of 3.0-5.3 nm exhibits a linear dependence on the subthreshold swing. We found that this dependence is also valid for oxide grown in N2O or O-2.