Browsing by Author "Chan, P. -C."

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Analysis of the Short-Term Response in the Drain Current of a-IGZO TFT to Light Pulses
(2017-07-01)
Liu, H. -W.
;
Chan, P. -C.
;
Lin, J. -H.
;
Chang, C. -Y.
;
Tai, Y. -H.
In this letter, the response in the drain current (I-D) of the amorphous indium-gallium-zinc oxide thin-film transistors under positive-bias illumination stress is measured with respect to time in less than 5 s under light pulseswith altering frequencies and duty ratios. The curves of I-D under the light pulses are affected by the different defect-reacting rates under illumination and in the dark. By taking the derivative of ID, the trend of the change in the number of defects becomes clear. The total behavior of I-D in response to light pulses can be fairly predicted by the integral of the derivative terms with a correction factor of charge trapping.
Degradation of a-IGZO Thin-Film Transistors Under Negative Bias and Illumination Stress in the Time Span of a Few Seconds
(2018-05-01)
Tai, Y. -H.
;
Liu, H. -W.
;
Chan, P. -C.
;
Chiu, S. -L.
;
電機學院
This letter investigated the time response behavior of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under negative gate bias and illumination stress (NBIS) in sub-seconds. For the first time, significant degradation even in periods as short as sub-seconds under NBIS was observed. The stretchedexponential behavior of threshold voltage shift (Delta Vth) revealed similar mechanisms for short-and long-term NBIS. As a-IGZO TFTs operate at a very high speed, the non-negligible Delta Vth owing to the influence of fast oxygen vacancy needs to be considered to ensure a-IGZO TFT circuits function well in real applications.