Browsing by Author "Chan, Yi-Chun"

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Bipolar resistive switching effect in Gd(2)O(3) films for transparent memory application
(2011-07-01)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
A transparent resistive random access memory based on ITO/Gd(2)O(3)/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2 V/+2 V, and highly transmittance above 80% for visible light. From the TEM and XPS analysis, the asymmetry of the interfacial layer thickness is responsible for the asymmetric switching properties. The transitional multi-valance states of the bottom interfacial layer can serve as oxygen reservoir for oxygen migration back and forth under different polarity of applied bias. This work presents a candidate material Gd(2)O(3) for the application on the T-RRAM devices. (C) 2011 Elsevier B.V. All rights reserved.
Bipolar resistive switching effect in Gd2O3 films for transparent memory application
(2011-07-01)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
A transparent resistive random access memory based on ITO/Gd2O3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2 V/+2 V, and highly transmittance above 80% for visible light. From the TEM and XPS analysis, the asymmetry of the interfacial layer thickness is responsible for the asymmetric switching properties. The transitional multi-valance states of the bottom interfacial layer can serve as oxygen reservoir for oxygen migration back and forth under different polarity of applied bias. This work presents a candidate material Gd2O3 for the application on the T-RRAM devices. (C) 2011 Elsevier B.V. All rights reserved.
Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devices
(2013-09-01)
Zhong, Chia-Wen
;
Tzeng, Wen-Hsien
;
Liu, Kou-Chen
;
Lin, Horng-Chih
;
Chang, Kow-Ming
In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfOx/TiN capacitor structure is investigated. Switching parameters, including set and reset voltage values, and high and low resistance values are highly related to the properties of ITO thin films. Higher resistance values in both states can be obtained when ITO thin films with higher oxygen contents are used as top electrodes; such values are accompanied by larger set voltages and fluctuating transient currents during the reset process. Based on the proposed filament model, we suggest that the switching mechanism of HfOx/TiN structure is attributed to the formation and rupture of conducting filamentary paths near the anodic side, which is highly correlated with the properties of the top electrode. The top electrode must be well determined to obtain reliable switching properties. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.
Effect of ultraviolet light exposure on a HfO(x) RRAM device
(2010-10-01)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfO(x)/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfO(x)/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO(2) layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices. (C) 2010 Elsevier B.V. All rights reserved.
Effect of ultraviolet light exposure on a HfOx RRAM device
(2010-10-01)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfOx/TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfOx/TiN sample. Under the appropriate exposure time, the samples were able to achieve the superior electrical characteristics and reduced resistance dispersion. We suggest that the improvement of switching characteristics and resistance dispersion is related to the oxygen-rich HfO2 layer formed at the M/O interface caused by UV light. This indicates that UV laser exposure is a critical issue in the electrical characteristics of RRAM devices. (C) 2010 Elsevier B.V. All rights reserved.
Investigation on the abnormal resistive switching induced by ultraviolet light exposure based on HfOx film
(2010-12-01)
Chang, Kow-Ming
;
Tzeng, Wen-Hsien
;
Liu, Kou-Chen
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
Effect of ultraviolet (UV) light exposure on the resistive switching characteristics of a ITO/HfOx/TiN structure were investigated in this study. Samples exposed with and without ITO shield film exhibit distinct switching characteristics, including leakage current, I-V curves, set and reset voltage fluctuation. Based on random circuit network simulation by Liu et al., we suggest the distinction was attributed to the different filament shapes during forming process. Defects preexisted inside the HfOx film can cause large difference on the electrical properties. Therefore, the UV laser exposure is a critical issue on the electrical characteristics of RRAM devices. (C) Elsevier Ltd. All rights reserved.
Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin film
(2012-02-01)
Tzeng, Wen-Hsien
;
Zhong, Chia-Wen
;
Liu, Kou-Chen
;
Chang, Kow-Ming
;
Lin, Horng-Chih
A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/center dot center dot center dot/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics can be performed by applying the positive- or negative-bias through top electrode, however, the differences of switching and stability in the two different operations can be observed. The diversities of electrical property are attributed to different oxide/ITO interface materials, which influence the current flow of the injected electrons. Crown Copyright (c) 2011 Published by Elsevier B.V. All rights reserved.
The resistive switching characteristics of a Ti/Gd(2)O(3)/Pt RRAM device
(2010-05-01)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
We successfully fabricated the Gd(2)O(3) film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd(2)O(3)/Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching properties. The switching behavior under positive bias operation was more stable, had less voltage and resistance fluctuation, and had longer endurance than that of the negative one. We propose that the anode electrode plays an important role in the switching characteristics and may be the cause of the asymmetry of the I-V curves between positive and negative operation. (C) 2010 Elsevier Ltd. All rights reserved.
The resistive switching characteristics of a Ti/Gd2O3/Pt RRAM device
(2010-05-01)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
We successfully fabricated the Gd2O3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd2O3/Pt capacitor structure could be both operated under positive or negative bias. However, there was a significant difference on the switching properties. The switching behavior under positive bias operation was more stable, had less voltage and resistance fluctuation, and had longer endurance than that of the negative one. We propose that the anode electrode plays an important role in the switching characteristics and may be the cause of the asymmetry of the I-V curves between positive and negative operation. (C) 2010 Elsevier Ltd. All rights reserved.
Transparent resistive random access memory (T-RRAM) based on Gd2O3 film and its resistive switching characteristics
(2010)
Liu, Kou-Chen
;
Tzeng, Wen-Hsien
;
Chang, Kow-Ming
;
Chan, Yi-Chun
;
Kuo, Chun-Chih
A transparent resistive random access memory (T-RRAM) based on ITO/Gd2O3/ITO capacitor structure is successfully fabricated on Glass substrate by pulse laser deposition (PLD) at room temperature. Under bipolar operation, the ITO/Gd2O3/ITO device exhibits reliable and stable resistive switching behaviors for more than 200 switching cycles and low operation voltage of -2V/+2V. Furthermore, our device demonstrates nonpolar resistive switching characteristic which exhibits high potential to be applied for the next generation nonvolatile memory.