Browsing by Author "Chand, U."

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Bipolar tri-state resistive switching characteristics in Ti/CeOx/Pt memory device
(2014-12-01)
Ismail, M.
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Abbas, M. W.
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Rana, A. M.
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Talib, I.
;
Ahmed, E.
Highly repeatable multilevel bipolar resistive switching in Ti/CeOx/Pt nonvolatile memory device has been demonstrated. X-ray diffraction studies of CeO2 films reveal the formation of weak polycrystalline structure. The observed good memory performance, including stable cycling endurance and long data retention times (> 10(4) s) with an acceptable resistance ratio (similar to 102), enables the device for its applications in future non-volatile resistive random access memories (RRAMs). Based on the unique distribution characteristics of oxygen vacancies in CeOx films, the possible mechanism of multilevel resistive switching in CeOx RRAM devices has been discussed. The conduction mechanism in low resistance state is found to be Ohmic due to conductive filamentary paths, while that in the high resistance state was identified as Ohmic for low applied voltages and a space-charge-limited conduction dominated by Schottky emission at high applied voltages.
Metal oxide resistive switching memory: Materials, properties and switching mechanisms
(2017-01-01)
Kumar, D.
;
Aluguri, R.
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Chand, U.
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Tseng, T. Y.
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電子工程學系及電子研究所
With the continuously changing landscape of the computer technologies, a new memory type is needed that will be fast, energy efficient and long-lasting. It shall combine the speed of random access memory (RAM) and nonvolatile in the same time. Resistive RAM (RRAM) is one of the most promising candidates in this respect. RRAM has attracted a great deal of attention owing to its potential as a possible replacement for flash memory in next-generation nonvolatile memory (NVM) applications. A brief summary of binary metal oxide RRAM is given in this review. We discuss the RRAM technology development based on published papers, including the mechanism of resistive switching in transition metal oxides, resistive switching materials, device structure, properties, and reliability such as endurance and retention of the device. We also provide possible solutions through innovations in device materials, structures, and understanding the device physics.