Browsing by Author "Chang, C. M."

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Environmental Issues for Cities in China: SO(2) Emissions and Population Distribution
(2009-01-01)
Chang, C. M.
;
Wang, W. L.
;
Hu, J. L.
;
經營管理研究所
;
Institute of Business and Management
In this paper we establish a number of environmental indices to rate the green efficiency of cities in China, while at the same time using them to discuss two problems in China: emissions of sulfur dioxide (SO(2)) and population distribution. The indices used in this paper have never been implemented in the literature. From them, we can understand the level of environmental protection in China and be better equipped to improve the country's environmental pollution, We also use macroeconomic data in this paper, and draw Valuable conclusions. The data cover 1998 to 2003. All nominal variables are transformed into real variables based oil 1998 price levels using the GDP deflator. To the best of our knowledge, China's eastern cities have the most prosperous economics in China. However, their overall green efficiency Value is inferior to that of the central cities. We further find that no city has a Population that exceeds the optimal population target value. This is all astonishing finding. The eastern cities' emissions of SO(2) are the highest and their additional population capacity is the lowest. The overall performance of the central cities of China is therefore superior to that of the eastern cities. Finally, we also find that the development between the eastern and western areas of China is balanced.
Environmental Issues for Cities in China: SO2 Emissions and Population Distribution
(2009-01-01)
Chang, C. M.
;
Wang, W. L.
;
Hu, J. L.
;
經營管理研究所
;
Institute of Business and Management
In this paper we establish a number of environmental indices to rate the green efficiency of cities in China, while at the same time using them to discuss two problems in China: emissions of sulfur dioxide (SO2) and population distribution. The indices used in this paper have never been implemented in the literature. From them, we can understand the level of environmental protection in China and be better equipped to improve the country's environmental pollution, We also use macroeconomic data in this paper, and draw Valuable conclusions. The data cover 1998 to 2003. All nominal variables are transformed into real variables based oil 1998 price levels using the GDP deflator. To the best of our knowledge, China's eastern cities have the most prosperous economics in China. However, their overall green efficiency Value is inferior to that of the central cities. We further find that no city has a Population that exceeds the optimal population target value. This is all astonishing finding. The eastern cities' emissions of SO2 are the highest and their additional population capacity is the lowest. The overall performance of the central cities of China is therefore superior to that of the eastern cities. Finally, we also find that the development between the eastern and western areas of China is balanced.
The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach
(2008-11-24)
Chung, Steve S.
;
Chang, C. M.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this paper, the trapping/detrapping in high-k gate dielectrics has been analyzed by gate current random telegraph noise (I(G)) measurement. Gate current is suppressed when traps capture electrons and recovers for empty traps. By statistically extracting capture and emission times, we can understand the trap properties. Besides, the influence will be understood by observing the variation of Gate current fluctuation. Through the analysis of the device after soft-breakdown (SBD), the deterioration of the dielectric will change the capture cross section. Moreover, the traps in the SBD path have been identified as the cause of a huge increase in the gate leakage.
The Observation of Trapping and Detrapping Effects in High-k Gate Dielectric MOSFETs by a New Gate Current Random Telegraph Noise (I(G)-RTN) Approach
(2008)
Chang, C. M.
;
Chung, Steve S.
;
Hsieh, Y. S.
;
Cheng, L. W.
;
Tsai, C. T.
A new method, called gate current Random Telegraph Noise (I(G) RTN), was developed to analyze the oxide quality and reliability of high-k gate dielectric MOSFETs. First, a single electron trapping/detrapping from process induced trap in nMOSFET was observed and the associated physical mechanism was proposed. Secondly, I(G) RTN has also been successfully applied to differentiate the difference in electron tunneling mechanism for a device under high-field or low-field stress. Finally, the soft-breakdown (SBD) behavior of a device can be clearly identified. Its I(G) RTN characteristic is different from that before soft-breakdown. It was found that SBD will indeed induce extra leakage current as a result of an additional breakdown path.