Browsing by Author "Chang, Chan-Ching"

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Development of stable micro-crystalline silicon AMLCD
(2007-01-01)
Chang, Chan-Ching
;
Chen, Chih-Hsien
;
Peng, Ya-Hui
;
Lee, Yeong-Shyang
;
Hou, Chih-Yuan
Bottom-gate microcrystalline silicon thin film transistors (mu c-Si TFTs) have been produced by the radio frequency glow discharge technique using three different plasma treatment on the interface between microcrystalline and SiN layers. Our first microcrystalline silicon TFTs have better stability at high temperature stress.
Electrical characterization of bathophenanthroline doped with dipotassium phthalate
(2007)
Hsieh, Ming-Ta
;
Chang, Chan-Ching
;
Chen, Jenn-Fang
;
Ho, Meng-Huan
;
Chen, Teng-Ming
Bathophenanthroline (BPhen) doped with dipotassium phthalate (PAK2) was electrically characterized using current-voltage (I-V) and temperature-dependent admittance spectroscopy measurements which demonstrates that the incorporation of PAK2 into BPhen can increase the electron concentration of the BPhen layer resulting in the transformation of the Fermi-level from deep to shallow (around 0.5 eV below LUMO band) and Accordingly, PAK2 is an alternative n-type organic dopant for n-type doping device.
Electrical Properties of Metal-Silicon Nitride-Hydrogenated Amorphous Silicon Capacitor Elucidated Using Admittance Spectroscopy
(2008-12-01)
Hsieh, Ming-Ta
;
Chen, Jenn-Fang
;
Yen, Kuo-Hsi
;
Zan, Hsiao-Wen
;
Chang, Chan-Ching
Detailed admittance spectroscopy was performed on a metal-silicon nitride-hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under various operating conditions (accumulation, depletion and full depletion) are presented along with an alternative direct measurement method at room temperature. Admittance spectroscopy shows that the interface states density between silicon nitride (SiN(x)) and a-Si:H can be determined from the depletion equivalent circuit model. The resisivity and activation energy of a-Si:H can also be obtained using the accumulation and depletion equivalent circuit models. These models can be employed easily to monitor the fabrication parameters of thin-films transistors (TFTs) and to accurately and directly obtain the capacitance model parameters of TFTs. [DOI: 10.1143/JJAP.47.8714]
Highly power efficient organic light-emitting diodes with a p-doping layer
(2006-12-18)
Chang, Chan-Ching
;
Hsieh, Ming-Ta
;
Chen, Jenn-Fang
;
Hwang, Shiao-Wen
;
Chen, Chin H.
In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4('),4(')-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (2-TNATA) to replace the volatile tetrafluro-tetracyanoquinodimethane. The authors propose the 2-TNATA:WO3 composition functions as a p-doping layer which significantly improves hole injection and conductivity of the device that leads to the fabrication of tris(8-quinolinolato)aluminum based p-i-n OLEDs with long lifetime, low driving voltage (3.1 V), and high power efficiency (3.5 lm/W) at 100 cd/m(2). (c) 2006 American Institute of Physics.
Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N-'-phenylamino]-4,4(') diamine doped with tungsten oxide by admittance spectroscopy
(2006-09-04)
Hsieh, Ming-Ta
;
Chang, Chan-Ching
;
Chen, Jenn-Fang
;
Chen, Chin H.
;
電子物理學系
The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N-'-phenylamino]-4,4(') diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO3 volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97x10(14) to 1.90x10(17) cm(-3) and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region. (c) 2006 American Institute of Physics.
Study the electrical properties of non-crystalline semiconductor by admittance spectroscopy
(2007)
Hsieh, Ming-Ta
;
Chang, Chan-Ching
;
Chen, Jenn-Fang
;
Zan, Hsiao-Wen
;
Yen, Kuo-Hsi
We developed three types of equivalent circuit model to investigate the electrical properties of non-crystalline semiconductor. From the equivalent circuit models, parameters of non-crystalline semiconductor can be easily obtained by admittance spectroscopy. This method also can be utilized in the optimization of device process as well.
Using tunneling junction to enhance hole-injection in organic light-emitting diodes
(2005)
Chang, Chan-Ching
;
Hwang, Shiao-Wen
;
Hsieh, Ming-Ta
;
Ma, Jia-Wei
;
Chen, Chin H.
We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq(3)/WO3 layer. The device, ITO/Mg:Alq(3)/WO3/NPB/Alq(3)/LiFAl achieved one of the lowest driving voltages of 5.8 V at 20mA/cm(2) for conventional small molecule OLEDs. We propose the laminated Mg:Alq(3)/WO3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq(3) emitter.