Browsing by Author "Chang, Chao-Min"

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DC Characteristics of InAlAs/InGaAsSb/InGaAs Double Heterojunction Bipolar Transistors
(2010-12-01)
Chen, Shu-Han
;
Chang, Chao-Min
;
Chiang, Pei-Yi
;
Wang, Sheng-Yu
;
Chang, Wen-Hao
DC electrical characteristics of a series of InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors (DHBTs) that are grown on InP by molecular beam epitaxy are reported and analyzed. The InGaAsSb base of the transistors leads to a type-I base-emitter junction and a type-II base-collector junction, resulting in unique device characteristics, such as low turn-on voltage, low crossover current, and constant current gain over a wide current range. In addition, the DHBTs exhibit rather high current gains despite the use of a heavily doped thick InGaAsSb base layer. This indicates the long minority carrier lifetime of the InGaAsSb material. A high current gain over base sheet resistance ratio is, thus, realized with these novel DHBTs.