Browsing by Author "Chang, Che Wei"

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Comparison of ZnO and Ti-doped ZnO sensing membrane applied in electrolyte-insulator-semiconductor structure
(2018-04-15)
Lee, Ming Ling
;
Wang, Jer Chyi
;
Kao, Chyuan Haur
;
Chen, Hsiang
;
Lin, Chan Yu
In this paper, we demonstrate electrolyte-insulator-semiconductor devices for biochemical sensing applications prepared from ZnO and Ti-doped ZnO sensing membranes deposited on Si substrates by radio frequency sputtering. The structural, morphological, and compositional features of these deposited films with multitemperature annealing were studied using X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy, respectively. Sensitivity, linearity, hysteresis, and drift rate were measured to determine the sensing and reliability performance of all fabricated devices. Compared to the ZnO electrolyte-insulator-semiconductor (EIS), the Ti-doped ZnO EIS sensor annealed at 700 degrees C exhibits a higher sensitivity of 57.56 mV/pH, lower hysteresis of 2.79 mV, and lower drift rate of 0.29 mV/h. For Ti-doped ZnO, sensitivities of 3.62 mV/mM and 6.42 mV/mM were obtained for urea and glucose sensing, respectively. The improvements are owing to Ti-doping, which produces a rougher sensing surface, a well-crystallized grain structure, and thinner silicate and SiO2 at the silicon-oxide interface.
The CeO2 Sensing Membrane in Electrolyte-Insulator-Semiconductor for Bio-Sensor Applications
(2014)
Liu, Che Chun
;
Lee, Ming Ling
;
Chang, Kow Ming
;
Chang, Shan Wei
;
Chen, Hsiang
In the paper, the EIS structure with high-k CeO2 sensing film has more responsive to H+ relative to Na+ and K+. The CeO2 sensing membrane annealed with O-2 at 800 degrees C shows a higher sensitivity of 58.76 mV/pH, higher linearity, lower hysteresis voltage of 5.97 mV and lower drift rate of 0.96 mV/hr than the other conditions.
The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applications
(2014)
Lin, Chih Ju
;
Lee, Ming Ling
;
Chang, Kow Ming
;
Chang, Shan Wei
;
Chen, Hsiang
In the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900 degrees C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.