Browsing by Author "Chang, Chi Tso"

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BEOL Reliability Enhancement by Applying New Capping Materials
(2017-01-01)
Chang, Hui-Lin
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Chang, Chi Tso
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材料科學與工程學系
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Department of Materials Science and Engineering
With the increasing miniaturization of devices, back-end-of-line (BEOL) reliability has become a prime concern. Electromigration (EM) is usually improved using cap materials, such as atomic layer deposition tungsten (ALD-W) and cobalt tungsten phosphide (CoWP). This study investigates the efficacy of EM and the time-dependent dielectric breakdown enhancement models (TDDB) based on cap materials. The selectivity of low-resistivity ALD-W using WF6 is improved when the reducing agent SiH4 is replaced with B2H6. The modified ALD-W also exhibits a higher dissociation rate for W nucleation. The chosen precursor plays an important role in the selective deposition of dielectric or Cu materials. Relative to Cu, the EM failure time of SiH4 treatment with CoWP, untreated CoWP and ALD-W was improved more than tenfold, tenfold, and threefold, respectively. The higher EM enhancement in CoWP than in ALD-W may be attributed to the thicker cap attainable by CoWP without selectivity loss. When CoWP is used as the cap material, the appearance of an etching stop layer (ESL) confirms that there is no benefit to the time-dependent dielectric breakdown performance because of the relatively low breakdown voltage. Finally, we demonstrate the feasibility of using different cap materials for improving BEOL reliability, EM, and TDDB.
Synthesis and Characterization of Silicon and Nitrogen Containing Carbon-Based Crystals and Their Nanostructured Materials
(2014)
Chang, Hui Lin
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Chang, Chi Tso
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Kuo, Cheng Tzu
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交大名義發表
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材料科學與工程學系
The synthesis of carbon-based materials, such as man-made diamonds, superhard C3N4 materials, SiCN crystals, and other carbon-based nanostructured materials, has attracted considerable attention for many decades in academic and industrial communities. However, so far, researchers have not successfully linked the growth mechanisms of carbon-based materials deposited under different synthetic conditions and methods. In fact, a single machine may produce many of these materials. This paper is aimed to study the linkages among various carbon-based materials synthesized on Si wafers using the same microwave plasma chemical vapor deposition system, including SiCN crystalline films, SiCN nanotubes, carbon nanotubes (CNTs), conical carbon nanorods, and other nanostructured materials. (C) The Author(s) 2014. Published by ECS. All rights reserved.