Browsing by Author "Chang, Chia-Cheng"

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High Electromigration Lifetimes of Nanotwinned Cu Redistribution Lines
(2019-01-01)
Tseng, I-Hsin
;
Li, Yu-Jin
;
Lin, Benson
;
Chang, Chia-Cheng
;
Chen, Chih
In this paper, we measured the electromigration lifetimes for nanotwinned copper (nt-Cu) and regular copper redistribution lines (RDLs) for 3D-ICs packaging. The width of the RDLs is 10 mu m in width and 5 mu m in thickness, and the lines were coated by polyimide. The average lifetime of the nt-Cu RDL copper line is 445 hours to reach 1.2 times of its initial resistance. However, it takes 160 hours to reach the same resistance increase for regular copper RDL line. The nt-Cu has better EM lifetime than regular copper.
Highly (111)-oriented Nanotwinned Cu for High Fatigue Resistance in fan-out wafer-level packaging
(2019-01-01)
Li, Yu-Jin
;
Theng, Chih-Han
;
Tseng, I-Hsin
;
Chen, Chih
;
Lin, Benson
Fanout wafer level packaging is a potential solution for combining high electrical performance and low cost. However, with the shrinkage of the package, the mechanical reliability of the copper redistribution layer becomes an important issue. However, based on the processing of fan out packaging, the copper lines were annealed several times during the process. The annealing process is harmful to traditional strengthen mechanisms, but not to columnar grains with high density twinning structure. In this study, the technology of electroplating highly <111>-oriented copper lines was introduced to solve the reliability issue in copper RDLs. By the nature of nano-twinned Cu, the performance of thermal cycling test (TCT) lifetime is much better than normal copper, and the failure mechanisms were discussed in this study.