Browsing by Author "Chang, Chiao"

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Comparative investigation of Schottky barrier height of Ni/n-type Ge and Ni/n-type GeSn
(2017-09-01)
Jheng, Li Sian
;
Li, Hui
;
Chang, Chiao
;
Cheng, Hung Hsiang
;
Li, Liang Chen
We report an investigation of the Schottky barrier height (SBH) of Ni/n-type Ge and Ni/n-type GeSn films that is annealed at a wide range of temperatures. Both voltage-and temperature-dependent current-voltage (I-V) measurements are performed. From the analysis of these nonlinear I-V traces, the SBH is found and the results shows that the SBH of Ni/n-type GeSn (a) is smaller than that of Ni/n-type Ge and (b) decreases with the Sn content of the surface GeSn layer associated with the thermal annealing. By modeling the composition-and strain-dependent energy bandgap (E-g), the relationship between the SBH and Eg is established and it is found that SBH/E-g similar to 0.8. These results suggest that the GeSn film could serve as an interfacial layer for the reduction of the SBH in Ge-based electronic devices that are desirable for applications. (C) 2017 Author(s).
Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate
(2016-04-01)
Chang, Chiao
;
Li, Hui
;
Huang, Ssu-Hsuan
;
Lin, Li-Chien
;
Cheng, Hung-Hsiang
The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13A/cm(2). We obtained no-phonon-and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni's empirical expression with alpha = 4.884 x 10(-4) eV/K and beta = 130 K. (C) 2016 The Japan Society of Applied Physics
Temperature-dependent electroluminescence from GeSn heterojunction light-emitting diode on Si substrate
(2016-04)
Chang, Chiao
;
Li, Hui
;
Huang, Ssu-Hsuan
;
Lin, Li-Chien
;
Cheng, Hung-Hsiang
The electroluminescence from a Ge/GeSn/Ge p-i-n light-emitting diode on Si was investigated under different temperatures ranging from 25 to 150 K. The diode was operated at a low injection current density of 13A/cm(2). We obtained no-phonon-and phonon-assisted replicas in emission spectra. Also, the relationship between indirect bandgap energy and temperature was investigated. The temperature-dependent bandgap energy followed Varshni\'s empirical expression with alpha = 4.884 x 10(-4) eV/K and beta = 130 K. (C) 2016 The Japan Society of Applied Physics