Browsing by Author "Chang, Chih-Chieh"

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Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaN(x) on Adhesion with Copper
(2010-01-01)
Chang, Chih-Chieh
;
Pan, Fu-Ming
;
Chen, Ching-Wen
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This study performs surface reduction treatments, including hydrogen plasma treatment and rapid thermal anneal (RTA) in hydrogen ambient, to reduce the nitrogen content in the surface layer of the TaN(x) ultrathin film deposited by plasma-enhanced atomic layer deposition (PE-ALD). A four-point bend delamination test and a pull-off tensile test are used to study the interfacial strength of the PE-ALD thin film with copper. According to X-ray photoelectron spectroscopy and Auger electron spectroscopy, a new chemical phase with a very small nitrogen content, possibly beta-TaN(x), is formed on the PE-ALD TaN(x) thin film after the RTA treatment. The increase in the Ta/N atomic ratio in the RTA-treated TaN(x) thin film significantly improves the adhesion of the TaN(x) film with the sputter-deposited Cu layer. However, the hydrogen-plasma-treated TaN(x) thin film shows a slight decrease in nitrogen content but still demonstrates better adhesion with the Cu layer compared with the as-deposited one. While the Cu overlayer on the RTA-treated PE-ALD TaN(x) thin film can sustain the thermal anneal at 600 degrees C, the one on the as-deposited TaN(x) thin film exhibits voiding even at a temperature as low as 400 degrees C.
Effect of Surface Reduction Treatments of Plasma-Enhanced Atomic Layer Chemical Vapor Deposited TaNx on Adhesion with Copper
(2010-01-01)
Chang, Chih-Chieh
;
Pan, Fu-Ming
;
Chen, Ching-Wen
;
材料科學與工程學系
;
Department of Materials Science and Engineering
This study performs surface reduction treatments, including hydrogen plasma treatment and rapid thermal anneal (RTA) in hydrogen ambient, to reduce the nitrogen content in the surface layer of the TaNx ultrathin film deposited by plasma-enhanced atomic layer deposition (PE-ALD). A four-point bend delamination test and a pull-off tensile test are used to study the interfacial strength of the PE-ALD thin film with copper. According to X-ray photoelectron spectroscopy and Auger electron spectroscopy, a new chemical phase with a very small nitrogen content, possibly beta-TaNx, is formed on the PE-ALD TaNx thin film after the RTA treatment. The increase in the Ta/N atomic ratio in the RTA-treated TaNx thin film significantly improves the adhesion of the TaNx film with the sputter-deposited Cu layer. However, the hydrogen-plasma-treated TaNx thin film shows a slight decrease in nitrogen content but still demonstrates better adhesion with the Cu layer compared with the as-deposited one. While the Cu overlayer on the RTA-treated PE-ALD TaNx thin film can sustain the thermal anneal at 600 degrees C, the one on the as-deposited TaNx thin film exhibits voiding even at a temperature as low as 400 degrees C.
In Situ Two-Step Plasma Enhanced Atomic Layer Deposition of Ru/RuNx Barriers for Seedless Copper Electroplating
(2011)
Chang, Chih-Chieh
;
Pan, Fu-Ming
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The study prepared Ru/RuNx bilayer barriers on mesoporous SiO(2) (mp-SiO(2)) dielectric layers for direct Cu electroplating applications using in situ two-step plasma-enhanced atomic chemical vapor deposition (PEALD). For the 5 nm thick Ru/RuNx bilayer deposited at 200 degrees C, obvious thermal decomposition begins at temperatures lower than 400 degrees C. Copper can be successfully electroplated on the as-deposited Ru/RuNx bilayer, and the Cu/Ru/RuNx/mp-SiO(2) film stack can withstand thermal treatment at temperatures up to 500 degrees C without significant physical and chemical degradations according to TEM and SIMS analyses. The study shows that the electroplated Cu layer behaves like a passivation layer that improves the thermal stability of the Ru/RuNx barrier during the thermal annealing. Pull-off tensile test shows that interfaces in the Cu/Ru/RuNx/mp-SiO2 film stack have good adhesion strength, but delamination occurs at the interface between the Ru/RuNx bilayer and the mp-SiO2 layer at 600 degrees C, resulting in Cu and Ru diffusion into the dielectric layer. The study has demonstrated that the PEALD Ru/RuNx bilayer structure prepared using the in situ two-step approach is suitable for the seedless Cu electroplating process in nanometer scale interconnect technology. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3554734] All rights reserved.
Pore sealing of mesoporous silica low-k dielectrics by oxygen and argon plasma treatments
(2009-11-01)
Chang, Chih-Chieh
;
Pan, Fu-Ming
;
Chen, Ching-Wen
;
材料科學與工程學系
;
Department of Materials Science and Engineering
In this study, we have prepared surfactant templated mesoporous silica thin films as the ultralow-k dielectrics and a TaN(x) thin film deposited by plasma enhanced atomic layer chemical vapor deposition (PE-ALCVD) using TaCl(5) as the gas precursor was used as the diffusion barrier. Without any surface modification for the dielectric layer, Ta atoms could easily diffuse into the mesoporous layer seriously degrading dielectric properties. O(2) and Ar plasmas have been used to modify the surface of the mesoporous dielectric in a high density plasma chemical vapor deposition (HDP-CVD) system, and both of the treatments produced a densified oxide layer a few nanometer thick. According to transmission electron microscopy and Auger electron spectroscopy, the pore sealing treatment could effectively prevent Ta atoms from diffusing into the mesoporous dielectric during the PE-ALCVD process. (C) 2009 Elsevier B.V. All rights reserved.