Browsing by Author "Chang, Chun-Chieh"
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Item type:Item, Graphene Quantum Dot Vertical Cavity Surface-Emitting Lasers(2019-11-01) ;Lee, Ya-Ju ;Yeh, Ting-Wei ;Zou, Chen ;Yang, Zu-PoChen, Jia-WenNonzero-bandgap graphene quantum dots (GQDs) are novel optical gain materials promising for solution-processed light sources with high cost efficiency and device performance. Currently, there have only been a few reports on the realization of GQDs-based lasers. Herein, we demonstrate for the first time room-temperature lasing emission with green gamut from GQDs in a vertical optical cavity composed of Ta2O5/SiO2 dielectric distributed Bragg reflectors (DBRs). The lasing is enabled by the unique design of the DBR, which not only provides a wide stopband spectrally overlapping with the emission of the GQDs but also allows high transmittance of optical excitation in the UV-light region. This demonstration is a clear evidence of the use of GQDs as optical gain materials and represents an important step forward toward their potential applications in wide-gamut laser displays and projectors.Item type:Item, Highly Plasmonic Titanium Nitride by Room-Temperature Sputtering(2019-10-25) ;Chang, Chun-Chieh ;Nogan, John ;Yang, Zu-Po ;Kort-Kamp, Wilton J. M.Ross, WillardTitanium nitride (TiN) has recently emerged as an attractive alternative material for plasmonics. However, the typical high-temperature deposition of plasmonic TiN using either sputtering or atomic layer deposition has greatly limited its potential applications and prevented its integration into existing CMOS device architectures. Here, we demonstrate highly plasmonic TiN thin films and nanostructures by a room-temperature, low-power, and bias-free reactive sputtering process. We investigate the optical properties of the TiN films and their dependence on the sputtering conditions and substrate materials. We find that our TiN possesses one of the largest negative values of the real part of the dielectric function as compared to all other plasmonic TiN films reported to date. Two-dimensional periodic arrays of TiN nanodisks are then fabricated, from which we validate that strong plasmonic resonances are supported. Our room-temperature deposition process can allow for fabricating complex plasmonic TiN nanostructures and be integrated into the fabrication of existing CMOS-based photonic devices to enhance their performance and functionalities.Item type:Item, Substrate-insensitive atomic layer deposition of plasmonic titanium nitride films(2017-03-01) ;Yu, Ing-Song ;Cheng, Hsyi-En ;Chang, Chun-Chieh ;Lin, Yan-WeiChen, Hou-TongThe plasmonic properties of titanium nitride (TiN) films depend on the type of substrate when using typical deposition methods such as sputtering. Here we show atomic layer deposition (ALD) of TiN films with very weak dependence of plasmonic properties on the substrate, which also suggests the prediction and evaluation of plasmonic performance of TiN nanostructures on arbitrary substrates under a given deposition condition. Our results also observe that substrates with more nitrogen-terminated (N-terminated) surfaces will have significant impact on the deposition rate as well as the film plasmonic properties. We further illustrate that the plasmonic properties of ALD TiN films can be tailored by simply adjusting the deposition and/or post-deposition annealing temperatures. Such characteristics and the capability of conformal coating make ALD TiN films on templates ideal for applications that require the fabrication of complex 3D plasmonic nanostructures. (C) 2017 Optical Society of America