Browsing by Author "Chang, Guan-Chang"

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Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc Oxide
(2011)
Chen, Min-Chen
;
Chang, Ting-Chang
;
Huang, Sheng-Yao
;
Chang, Guan-Chang
;
Chen, Shih-Cheng
This paper investigates the effect of oxygen concentrations of InGaZnO films on the resistive switching characteristics of a Pt/InGaZnO (IGZO)/TiN structure. The IGZO films were prepared by an RF magnetron sputtering system at various oxygen partial pressures at room temperature. The memory devices reveal a reversible unipolar switching behavior. In addition, the high-resistance state current was found to be strongly dependent on oxygen concentration. X-ray photoelectron spectroscopy analyses attributed this phenomenon to the non-lattice oxygen concentration in the IGZO thin films, rather than the change in crystalline constituent. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.007112esl] All rights reserved.