Browsing by Author "Chang, H. -R."

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The electrical characteristics of high-kappa Pr2O3 thin-film transistors with nitrogen-implanted polysilicon films
(2007)
Deng, C. -K.
;
Chang, H. -R.
;
Chiou, B. -S.
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
This paper demonstrates the poly-Si TFTs with high-kappa Pr2O3 gate dielectric and nitrogen implantation to achieve high-performance characteristics for the first time. Nitrogen atoms with various dosages are implanted into alpha-Si film before solid-phase crystallization (SPC) annealing. From experimental results, the electrical characteristics of Pr2O3 poly-Si TFT implanted with the nitrogen dosage of 5x10(12) cm(-2) could be greatly improved. In addition, a good hot-harrier immunity of high-kappa Pr2O3 poly-Si TFT could be also obtained.