Browsing by Author "Chang, Hsiao-Fen"

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Color filtering functional organic thin-film transistors
(2007)
Huang, Yu-Jen
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Chang, Hsiao-Fen
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Tsai, Shu-Ting
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Chuang, Chiao-Shun
;
Cheng, Jung-An
The colored insulators were utilized as the color filter and the dielectric layer of the OTFTs simultaneously to obtain the desired color. This work was successfully integrated gate insulator and color filter, which offered an ink-jet printing compatible process for cost-effective fabrication of liquid-crystal displays.
Organic thin-film transistors with color filtering functional gate insulators
(2008-08-04)
Chuang, Chiao-Shun
;
Cheng, Jung-An
;
Huang, Yu-Jen
;
Chang, Hsiao-Fen
;
Chen, Fang-Chung
We developed color filtering functional organic thin-film transistors exhibiting both high field-effect mobilities and color-filtering ability. The conventional colorant inks were utilized as the materials for the color filter/dielectric multifunction layers. In order to improve the electrical performance, a high dielectric polymeric insulator, poly(2,2,2-trifluoroethyl methacrylate), was introduced to modify the surface of the dielectric layer. Further, the Commission Internationale de L'Eclairage chromaticity coordinates were (0.64, 0.34), (0.36, 0.54), and (0.14, 0.15) for red, green, and blue devices, respectively, covering 49.2% National Television Systems Committee standard. This work represents one potential example for multifunctional organic electronics. (C) 2008 American Institute of Physics.
Photoerasable Organic Nonvolatile Memory Devices Based on Hafnium Silicate Insulators
(2011-12-01)
Chen, Fang-Chung
;
Chang, Hsiao-Fen
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光電工程學系
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顯示科技研究所
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Department of Photonics
We have prepared photoerasable organic nonvolatile memories using high-dielectric (high-k) hafnium silicate as device insulators. The high-k material can effectively lower the operating voltage of the organic memory devices. The nonvolatile memory can be written by applying a gate bias and be effectively erased by photon illumination. The spectral study of the photoinduced recovery effect indicated that the erasing mechanism should be relevant to the recombination between the trapped charges and the photogenerated exctions.