Browsing by Author "Chang, Hsun-Jui"

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Gold-Free Cu-Metallized III-V Solar Cell
(2014-01-01)
Hsu, Ching-Hsiang
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Chang, Hsun-Jui
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Yu, Hung-Wei
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Hong-Quan Nguyen
;
Ma, Jer-Shen
-Au-free, fully Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells using Pd/Ge/Cu as front contact and Pt/Ti/Pt/Cu/Cr as back contact were fabricated and the results are reported for the first time. From the specific contact resistance measurement, these Cu-metallized ohmic contacts have low contact resistance in the order of 10(-6) Omega-cm(2). AES and TEM results clearly show the formation mechanisms of the Cu-metallization ohmic structures, for Pd/Ge/Cu contact, it was due to the formation of Ge diffusion into the GaAs layer, and for the Pt/Ti/Pt/Cu/Cr contact, it was due to high work function of Pt layer, these copper metallized ohmic contacts were quite stable even after 310 degrees C annealing. The I-V curves of the Cu-metallized InGaP/InGaAs/Ge triple-junction solar cells showed similar electrical characteristics to the solar cells with Au-metallized triple junction solar cell. Overall, the Pd/Ge/Cu and Pt/Ti/Pt/Cu ohmic contacts have been successfully applied to the InGaP/InGaAs/Ge triple-junction solar cells and demonstrated excellent performance.
Gold-Free Fully Cu-Metallized InGaP/InGaAs/Ge Triple-Junction Solar Cells
(2014-12-01)
Hsu, Ching-Hsiang
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Chang, Edward Yi
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Chang, Hsun-Jui
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Yu, Hung-Wei
;
Hong Quan Nguyen
Copper contacts and interconnects were developed for GaAs and Ge for low-cost solar cell application. In addition, thermally annealed Pd/Ge and Pt/Ti/Pt metallizations were created for ohmic contacts to n-GaAs and p-Ge with contact resistance of 4.4 x 10(-6) and 6.9 x 10(-6) Omega cm(2), respectively. Utilizing such metallization structure for InGaP/InGaAs/Ge triple-junction device structure solar cells were fabricated that delivered conversion efficiency of 23.11%, which is average efficiency for the above device structure.
The reliability study of III-V solar cell with copper based contacts
(2015-12-01)
Hsu, Ching-Hsiang
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Chang, Edward Yi
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Chang, Hsun-Jui
;
Maa, Jer-Shen
;
Pande, Krishna
The reliability of III-V solar cell with copper based contacts as low-cost metallurgy option for solar cells including Cu-based Cu/Ge/Pd contact on n-type GaAs and Cu/Pt/Ti/Pt contact on p-type Ge is studied in this paper. The Cu-based contacts have low specific contact resistances of the order of 10(-6) Omega cm(2). The solar cells with the proposed Cu-based structures were subjected to high-temperature annealing (250 degrees C) and a high DC current (6.5 x 10(-4) mA/mu m(2)) stress test. Overall, the solar cell adopting these Cu-based contacts remained quite stable and demonstrated excellent performances after these reliability tests. (C) 2015 Elsevier Ltd. All rights reserved.