Browsing by Author "Chang, J. W."
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Item type:Item, On the doping effects for linearity improvement of InGaP/InGaAs PHEMT(2005) ;Lin, Yueh-Chin ;Chang, J. W. ;Chang, Edward Yi ;Chang, X. Y.材料科學與工程學系In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional delta-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.