Browsing by Author "Chang, K."
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Item type:Item, Effects of the Inductively Coupled Plasma Nitridation Process on the Reliability of HfAlOx Thin Films(2009) ;Chang, K. ;Chen, B. ;Su, M. ;電子工程學系及電子研究所Department of Electronics Engineering and Institute of ElectronicsHigh-k dielectric such as Hf-based dielectric has been considered to be inevitable for 45-nm CMOSFET technology node. The incorporation of Al in Hf-based dielectrics has been proven as a solution to the problem about thermal stability. Moreover, there have been some researches which describe that the reliability of the high-k dielectrics could be improved by the nitridation process. In this study, we examine the effect of different inductively coupled plasma (ICP) nitridation processes on the reliability of HfAlOx thin films. The hysteresis, stress induced leakage current (SILC) and constant voltage stress (CVS) characteristics of the nitrided HfAlOx thin films were preformed to prove the improvement effect of the plasma nitridation. Based on our experimental results, the ICP nitridation process would be an effective technology to improve the reliability of HfAlOx thin films.Item type:Item, Plasmonic Coupler for Silicon-Based Micro-Slabs to Plasominc Nano-Gap Waveguide Mode Coversion Enhancement(2013-06-01) ;Liu, Y. ;Lai, Y. ;Chang, K. ;光電工程學系Department of PhotonicsWe investigate a short (similar to 1.5 mu m) "partially" corrugated tapered waveguide for silicon-based micro-slab waveguide to plasmonic nano-gap waveguide mode conversion at the optical communication frequency. The structure is designed to achieve more precise mode matching between the silicon slabs and plasmonic waveguides. High transmission efficiencies up to 87% similar to 98% have been demonstrated numerically. The results show that the corrugated structure should not only be helpful for realizing full on-chip silicon plasmonic devices but also a good choice for mode coupling enhancement from dielectric waveguides to plasmonic waveguides. Meanwhile, we point out that the coupling mechanism reported here is different from that achieved by exciting surface plasmon polaritions (SPPs) at metal surfaces reported in the literature [18], [19].