Browsing by Author "Chang, KL"

Now showing 1 - 3 of 3

1.2V CMOS switched-capacitor circuits
(1996)
Wu, JT
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Chang, YH
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Chang, KL
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
High quality ultrathin CoTiO3 high-k gate dielectrics
(2000-09-01)
Pan, TM
;
Lei, TF
;
Chao, TS
;
Chang, KL
;
Hsieh, KC
A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3/Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices. (C) 2000 The Electrochemical Society. S1099-0062(00)03-095-9. All rights reserved.
Low supply voltage CMOS charge pumps
(1997)
Wu, JT
;
Chang, KL
;
交大名義發表
;
電子工程學系及電子研究所
;
National Chiao Tung University
Charge pumps that can operate under a low supply voltage are described. The use of charge transfer switches (CTSs) can improve the voltage pumping gain, applying dynamic control to the CTSs can reduce reverse currents. Appending bootrapped output stages to the new charge pumps can further expand the maximum output voltage.