Browsing by Author "Chang, Ko-Chin"

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Investigation of Radiation Hardness of HfO2 Resistive Random Access Memory
(2014-01-01)
Tsui, Bing-Yue
;
Chang, Ko-Chin
;
Shew, Bor-Yuan
;
Lee, Heng-Yuan
;
Tsai, Ming-Jinn
Radiation hardness of HfO2-based resistive random-access memory (RRAM) is investigated using extreme ultra-violet (EUV) and X-ray as radiation source. The low-resistance state (LRS) is immune to irradiation, but temporary change of the high-resistance state (HRS) and endurance degradation could be observed at high total irradiation dose (TID). A physical model is proposed to explain these observations. It is concluded that the HfO2-based RRAM can be operated in high radiation environment, and EUV can be use to fabricate high-density RRAM array.