Browsing by Author "Chang, Kuo Chin"

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SURFACE PASSIVATION EFFECT IN SGOI NANOWIRE BIOSENSOR WITH HIGH GE FRACTION
(2012-01-01)
Chang, Kow-Ming
;
Chen, Chu-Feng
;
Lai, Chiung-Hui
;
Hsieh, Cheng-Ting
;
Wu, Chin-Ning
The increase of surface to volume ratio results in the enhancement of the sensitivity of the nanowires. Our previous studies have shown that the higher Ge fraction of Si1-xGex nano-wire improves the sensitivity of the nanowire biosensor as a result of carrier mobility enhancement in strain-Si. Increasing the fraction of Ge in SiGe-on-Insulator (SGOI) using Ge condensation by oxidation has obtained a significant enhancement in hole mobility, further improving the sensitivity of SGOI nanowire. However, the sensitivity of SGOI nanowire was degraded for exceeding a Ge fraction of 20% (i.e., high Ge fraction), resulting from the unstable surface state. In this work, a top surface passivation SiO2 layer was deposited on Si0.8Ge0.2 nanowire and the sensitivity was about 1.3 times greater than nanowire sample without the top passivation layer.