Browsing by Author "Chang, Kuo-Pin"

Now showing 1 - 5 of 5

Effect of photonic crystal band gap on rotation of hollow oval Te rods in triangular lattice
(2006-09-01)
Chang, Kuo-Pin
;
Yang, Su-Lin
;
電子物理學系
;
Department of Electrophysics
The band structures and field patterns of two-dimensional (2D) triangular photonic crystals with hollow tellurium (Te) rods are calculated using the plane-wave method. Inner-rod and whole-rod rotations are considered to investigate how the rotational and structural symmetries affect E- and H-polarization modes. It is indicated that the H-polarization modes are strongly affected by the shape and interaction between the fields of the rods. In addition, the effect of rotational symmetry on H-polarization modes must be considered when whole rods are rotated. The E-polarization modes for both types of rotations are strongly related to the shape of the rods. Moreover, H-polarization modes determine the absolute photonic band gap (PBG) width when whole rods are rotated, while E-polarization modes determine the absolute PBG width when inner rods are rotated.
Impact of V-pass Interference on Charge-Trapping NAND Flash Memory Devices
(2015-06-01)
Hsiao, Yi-Hsuan
;
Lue, Hang-Ting
;
Chen, Wei-Chen
;
Chang, Kuo-Pin
;
Tsui, Bing-Yue
The impact of adjacent word-line\'s pass gate voltage interference on charge-trapping (CT) NAND Flash is extensively studied in this paper. From our previous work with a 38-nm half-pitch BE-SONOS NAND Flash device, we found that the threshold voltage significantly decreases with increasing pass gate voltage during reading. This observation is in contrary to the common belief that the CT NAND devices are immune to interference. In this paper, we further evaluate the pass gate voltage interference on 3-D CT NAND Flash, which is the most promising path for the future NAND Flash industry. Owing to the superior gate control ability in the double-gate architecture, the commonly observed pass gate voltage interference due to pitch scaling is suppressed. Stronger gate control ability also restrains the impact of field penetration in devices with narrow channel width. In 3-D CT NAND Flash, the thinner channel can also provide better gate control ability, which, in turn, results in smaller pass gate voltage interference.
Modeling the Impact of Random Grain Boundary Traps on the Electrical Behavior of Vertical Gate 3-D NAND Flash Memory Devices
(2014-06-01)
Hsiao, Yi-Hsuan
;
Lue, Hang-Ting
;
Chen, Wei-Chen
;
Chang, Kuo-Pin
;
Shih, Yen-Hao
The 3-D stacking of multiple layers of NAND using thin-film transistor (TFT) devices is widely accepted as the next step in continuing NAND Flash scaling. Low mobility and reliability problems are two well-known concerns regarding TFT devices. However, another important implication of using TFT devices is that the Vt variation induced by randomly distributed grain boundaries degrades the array performance. In this paper, an extensive TCAD simulation was conducted to systematically investigate how grain boundary generated traps affect NAND Flash devices. Minimizing the density of grain boundary traps is crucial for array performance. In addition, optimal gate control ability reduces the impact of grain boundaries. Thus, using double gate architecture in vertical gate 3-D NAND is favorable. Furthermore, when pitch is scaled in the future, device exhibiting smaller channel thickness should be used to increase the gate control.
Tungsten Oxide Resistive Memory Using Rapid Thermal Oxidation of Tungsten Plugs
(2010)
Lai, Erh-Kun
;
Chien, Wei-Chih
;
Chen, Yi-Chou
;
Hong, Tian-Jue
;
Lin, Yu-Yu
A complementary metal oxide semiconductor (CMOS)-compatible WO(x) based resistive memory has been developed. The WO(x) memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (similar to 2 ns) and the programming voltage (< 1: 4 V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and 10(8)-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WO(x) resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications. (C) 2010 The Japan Society of Applied Physics
Variation in the Absolute Photonic Band Gap of Rods Ranging from Square to Octagonal in Square Lattices
(2011-07-01)
Hu, Chung-An
;
Chang, Kuo-Pin
;
Yang, Su-Lin
;
Shen, Lin Fang
;
Wu, Jin-Jei
The band structures and field patterns of dielectric rods in square lattices are calculated using the plane-wave method. The rods with various cross-sectional shapes from square to octagonal at a fixed filling-factor are constructed to assess the geometry effect of photonic crystals to their band gap properties. Analytical results indicate that the corner profiles of rods significantly affect the E- and H-polarization bands in resonance frequency and field distribution. The absolute photonic band gap is closed in the square lattice when square dielectric rods are replaced with octagonal dielectric rods. (C) 2011 The Japan Society of Applied Physics