Browsing by Author "Chang, M. F."

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Flat band voltage control on low V(t) metal-gate/high-kappa CMOSFETs with small EOT
(2009-07-01)
Chin, Albert
;
Chang, M. F.
;
Lin, S. H.
;
Chen, W. B.
;
Lee, P. T.
The unwanted high threshold voltage (V(t)) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V(t) issue that is due to flat-band voltage (V(fb)) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V(fb) roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V(t) and good control of V(fb) roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,
Flat band voltage control on low V-t metal-gate/high-kappa CMOSFETs with small EOT
(2009-07-01)
Chin, Albert
;
Chang, M. F.
;
Lin, S. H.
;
Chen, W. B.
;
Lee, P. T.
The unwanted high threshold voltage (V-t) is the major challenge for metal-gate/high-kappa CMOs especially at small equivalent-oxide-thickness (EOT). We have investigated the high V-t issue that is due to flat-band voltage (V-fb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the V-fb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/high-kappa CMCSFETs using these methods have achieved low V-t and good control of V-fb roll-off at small 0.6-1.2 nm EOT. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved,
Low-Threshold-Voltage MoN/HfAlO/SiON p-MOSFETs With 0.85-nm EOT
(2009-08-01)
Chang, M. F.
;
Lee, P. T.
;
Chin, Albert
;
電子工程學系及電子研究所
;
光電工程學系
By using HfAlO as a capping layer on SiON, MoN/HfAlO/SiON p-MOSFETs show an effective work function of 5.1 eV, a low threshold voltage of -0.1 V, and a peak hole mobility of 80 cm(2)/(V . s) at small equivalent oxide thickness of 0.85 nm. These self-aligned and gate-first p-MOSFETs processes, with standard ion implantation and 1000 degrees C rapid thermal annealing, are fully compatible with current very large scale integration fabrication lines.
Small-Subthreshold-Swing and Low-Voltage Flexible Organic Thin-Film Transistors Which Use HfLaO as the Gate Dielectric
(2009-02-01)
Chang, M. F.
;
Lee, P. T.
;
McAlister, S. P.
;
Chin, Albert
;
電子工程學系及電子研究所
Pentacene organic thin-film transistors (OTFTs) with a high-k HfLaO dielectric were integrated onto flexible polyimide substrates. The pentacene OTFTs exhibited good performance, such as a low subthreshold swing of 0.13 V/decade and a threshold voltage of -1.25 V. The field-effect mobility was 0.13 cm(2)/V . s at an operating voltage as low as only 2.5 V. These characteristics are attractive for high-switching-speed and low-power applications.