Browsing by Author "Chang, M. N."

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Nanomanipulation measurement and PIC simulation of field-emission properties from a single crystallized silicon nano-emitter
(2007-06-06)
Cheng, T. C.
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Hsu, K. H.
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Chen, P. Y.
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Huang, W. J.
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Wu, J. S.
The field-emission characteristics of a single silicon nano-emitter were investigated by means of experiments and simulation models. The emitter array was fabricated by dry etching using an inductively coupled plasma (ICP) through a three-step process. A novel experimental technique was developed to precisely measure the field-emission current from a single silicon emitter. Accompanying these measurements, a parallelized three-dimensional particle-in-cell (PIC) code, in which the Fowler - Nordheim emission law was implemented at the emitter surface, was employed to simulate the emission current both with and without taking into account the space charge effect. Results show that the simulated I - V relationship when considering the space - charge effect was in excellent agreement with the actual measurements. Noticeably, the predicted turn-on voltage was found to be within only 9.3% of the experimental data. In addition, both the predicted and experimental data demonstrated a consistent single linear slope in the FN plot, which indicates that the field emission from a single silicon tip is a barrier-tunnelling, quantum mechanical process.
Photovoltaic effect on the conductive atomic force microscopic characterization of thin dielectric films
(2006-09-25)
Chang, M. N.
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Chen, C. Y.
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Yang, M. J.
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Chien, C. H.
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電子工程學系及電子研究所
The authors have used front-wing conductive probes to investigate the photovoltaic effect on the conductive atomic force microscopic (C-AFM) characterization of thin dielectric films. The surface photovoltage induced by the laser beam of an atomic force microscope can enhance the electrical field across the studied dielectric film, decreasing the onset voltage of the leakage current, resulting in a modified C-AFM image with a larger current distribution. Moreover, the experimental results also revealed that the influence of the photovoltaic effect on C-AFM would be more significant for dielectric films that are grown on a substrate with a higher carrier concentration. (c) 2006 American Institute of Physics.
Unipolar Switching Behaviors of RTO WO(X) RRAM
(2010-02-01)
Chien, W. C.
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Chen, Y. C.
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Lai, E. K.
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Yao, Y. D.
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Lin, P.
The microstructure and electrical properties of the WO(X)-based resistive random access memory are investigated in this letter. The WO(X) layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WO(X) layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.
Unipolar Switching Behaviors of RTO WOX RRAM
(2010-02-01)
Chien, W. C.
;
Chen, Y. C.
;
Lai, E. K.
;
Yao, Y. D.
;
Lin, P.
The microstructure and electrical properties of the WOX-based resistive random access memory are investigated in this letter. The WOX layer is formed by converting the surface of the W plug with a CMOS-compatible rapid thermal oxidation process. The conductive-atomic-force-microscopy result indicates that nanoscale conducting channels exist in the WOX layer and result in a low initial resistance. This letter studies the unipolar operation-the programming, reading, and reliability behaviors of the device are characterized systematically. The low programming voltages for RESET (3.3 V/50 ns) and fast SET speed (3 V/300 ns) are achieved along with cycling endurance greater than 10(7) times. In addition, the device is immune to read disturb. A 2-bit/cell operation is also demonstrated for high-density applications.