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Browsing by Author "Chang, N."

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    Interface morphology and electrical properties of bonded GaAs/GaAs wafers at different temperatures
    (2012)
    Chang, S. C.
    ;
    Wu, Y. S.
    ;
    Chang, N.
    ;
    材料科學與工程學系
    ;
    Department of Materials Science and Engineering
    The microstructure and electrical properties of p-GaAs/n-GaAs bonded interface were investigated. It was observed that when bonding temperature increased from 600 to 800 degrees C, the thickness of oxide layer decreased. Current-voltage characteristic shows typical diode behaviors in these temperature ranges.