Browsing by Author "Chang, Po Chun"

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Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect Transistors
(2016-08)
Quang Ho Luc
;
Cheng, Shou Po
;
Chang, Po Chun
;
Huy Binh Do
;
Chen, Jin Han
In-situ plasma-enhanced atomic layer deposition (PEALD) technique was employed for device passivation to realize a high-performance inversion-mode HfO2/In0.53Ga0.47As metal-oxide-semiconductor field-effect transistor (MOSFET). Excellent quality of gate dielectric is enabled by utilizing the PEALD-aluminum nitride as a pre-gate interfacial layer, followed by a post-gate remote-plasma gas treatment. In-situ PEALD treatment led to enhanced dc characteristics, such as drain current, peak transconductance, subthreshold swing, OFF leakage current, and effective electron mobility. X-ray photoelectron spectroscopy analysis indicates a reduction of In-and Ga-related signals. Furthermore, small drain current hysteresis and low-interface state density (D-it) value confirm a high interfacial quality for the high-k/III-V structure. Overall, the PEALD passivation for HfO2/In0.53Ga0.47As interface shows a remarkable improvement on the MOSFET performance.
Growth and characterization of high quality N-type GaSb/GaAs heterostructure by IMF growth mode using MOCVD for low power application
(2017-10-16)
Hsiao, Chih Jen
;
Kakkerla, Ramesh Kumar
;
Chang, Po Chun
;
Lumbantoruan, Franky Juanda
;
Lee, Tsu Ting
In this study, we demonstrate the growth of a 150-nm-thick GaSb layer on a GaAs substrate with excellent film quality using the interfacial misfit dislocation growth mode by the Metal-Organic Chemical Vapor Deposition technique. The n-type GaSb epilayer grown on the GaAs substrate has a low threading dislocation density of 3.2 x 10(6) cm(-2) and a surface roughness of approximately 0.8 nm. A high carrier mobility up to 4600 cm(2) V-1 s(-1) with a carrier concentration of 1.2 x 10(17) cm(-3) is achieved in this study. The fabricated Al2O3/GaSb/GaAs MOSCAP demonstrated excellent capacitance-voltage (C-V) characteristics with a small frequency dispersion of approximately 2.8%/decade. The results demonstrate the potential of high-mobility Sb-based materials on GaAs for p-type channel CMOS applications in the future. Published by AIP Publishing.