Browsing by Author "Chang, SC"

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A platform based bus-interleaved architecture for de-blocking filter in H.264/MPEG-4 AVC
(2005-02-01)
Chang, SC
;
Peng, WH
;
Wang, SH
;
Chiang, T
;
電子工程學系及電子研究所
In this paper, we proposed a platform based bus-interleaved architecture for the de-blocking filter in H.264. Specifically, to efficiently use the bus bandwidth, we classify the filtering mode into 8 types and use an adaptive transmission scheme to avoid redundant data transfer. Moreover, to reduce the processing latency, we use a bus-interleaved architecture for conducting data transmission and filtering in parallel. As compared to the state-of-the-art designs, our scheme offers 1.6x to 7x performance improvement. While clocking at 100MHz, our design can support 2560x1280@30Hz processing throughput. The proposed design is suitable for low cost and real-time applications. Moreover, it can be easily applied in system-on-chip design.
A platform-based de-blocking filter design with bus-interleaved architecture for H.264
(2005)
Chang, SC
;
Peng, WH
;
Wang, SH
;
Chiang, TH
;
交大名義發表
In this paper, we present an ARM platform-based architecture design for de-blocking filter in H.264. According to statistical analysis, we propose an adaptive transmission scheme to reduce the bus workload. Moreover, we develop a bus-interleaved architecture to reduce the processing latency. As compared to the state-of-the-art designs, our scheme offers 3x to 14x performance improvement. Furthermore, we have proved our design using an ARM emulation board.
A platform-based MPEG-4 Advanced Video Coding (AVC) decoder with block level pipelining
(2003)
Wang, SH
;
Peng, WH
;
He, YW
;
Lin, GY
;
Lin, CY
We present a baseline MPEG-4 AVC (Advanced Video Coding) decoder based on an optimized platform-based design methodology. With this methodology, we jointly optimize the software and hardware design of the decoder. Overall decoding throughput is increased by synchronizing the software and the dedicated co-processors. The synchronization is achieved at macroblock-level pipelining. In addition, we optimize the decoder software by enhancing the frame buffer management, boundary padding, and content aware inverse transform. To speed up motion compensation and inverse transform, which are the most computationally intensive modules, two dedicated acceleration modules are realized. For comparison, the proposed prototype decoder and MPEG-4 AVC reference decoder are evaluated on an ARM platform, which is one of most popular portable devices. Our experiments show that the throughput of the MPEG-4 reference decoder can be improved by 6 to 7 times. On an ARM966 board, the optimized software without hardware acceleration can achieve a decoding rate up to 5 frames per second (fps) for QCIF video sequences. With the dedicated accelerators, the overall throughput is increased by about 30% to reach 6.6 fps on the average and is up to 10.3 fps for slow motion video sequences.
A software-hardware co-implementation of MPEG-4 Advanced Video Coding (AVC) decoder with block level pipelining
(2005-08-01)
Wang, SH
;
Peng, WH
;
He, YW
;
Lin, GY
;
Lin, CY
We present a baseline MPEG-4 Advanced Video Coding (AVC) decoder based on the methodology of joint optimization of software and hardware. The software is first optimized with algorithm improvements for frame buffer management, boundary padding, content-aware inverse transform and context-based entropy decoding. The overall decoding throughput is further enhanced by pipelining the software and the dedicated hardware at macroblock level. The decoder is partitioned into the software and hardware modules according to the target frame rate and complexity profiles. The hardware acceleration modules include motion compensation, inverse transform and loop filtering. By comparing the optimized decoder with the committee reference decoder of Joint Video Team (JVT), the experimental results show improvement on the decoding throughput by 7 to 8 times. On an ARM966 board, the optimized software without hardware acceleration can achieve a decoding rate up to 5.9 frames per second (fps) for QCIF video source. The overall throughput is improved by another 27% to 7.4 fps on the average and up to 11.5 fps for slow motion video sequences. Finally, we provide a theoretical analysis of the ideal performance of the proposed decoder.
A variable P value rolling Grey forecasting model for Taiwan semiconductor industry production
(2005-06-01)
Chang, SC
;
Lai, HC
;
Yu, HC
;
科技管理研究所
;
Institute of Management of Technology
The semiconductor industry plays an important role in Taiwan's economy. In this paper, we constructed a rolling Grey forecasting model (RGM) to predict Taiwan's annual semiconductor production. The univariate Grey forecasting model (GM) makes forecast of a time series of data without considering possible correlation with any leading indicators. Interestingly, within the RGM there is a constant, P value, which was customarily set to 0.5. We hypothesized that making the P value a variable of time could generate more accurate forecasts. It was expected that the annual semiconductor production in Taiwan should be closely tied with U.S. demand. Hence, we let the P value be determined by the yearly percent change in real gross domestic product (GDP) by U.S. manufacturing industry. This variable P value RGM generated better forecasts than the fixed P value RGM. Nevertheless, the yearly percent change in real GDP by U.S. manufacturing industry is reported after a year ends. It cannot serve as a leading indicator for the same year's U.S. demand. We found out that the correlation between the yearly survey of anticipated industrial production growth rates in Taiwan and the yearly percent changes in real GDP by U.S. manufacturing industry has a correlation coefficient of 0.96. Therefore, we used the former to determine the P value in the RGM, which generated very accurate forecasts. (c) 2003 Elsevier Inc. All rights reserved.
Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnection
(2005-05-01)
Chiu, SY
;
Wang, YL
;
Chang, SC
;
Feng, MS
;
材料科學與工程學系
In this study, an effective seeding technology, plasma immersion ion implantation of palladium (PIII Pd), was proposed to achieve defect-free gap filling for copper electroplating (Cu-ECP). It was found that a threshold dosage (similar to 5.2 x 10(18) m(-2)) of PIII I'd was required to drive Cu-ECP and the dependence of Pd dosage on the implantation time was quasi-linear. The thickness of electroplated copper films increased as the Pd dosage increased. Too high a Pd dosage caused a rough copper film with high resistivity (> 10 mu Omega cm) while too low a I'd dosage resulted in an insufficient nucleation site for Cu-ECP, leading to poor film adhesion. In addition, a higher substrate bias of PIII was suggested to enhance the gap-filling capability of Cu-ECP and the Cu(111) formation of electroplated copper films. (c) 2004 Elsevier B.V. All rights reserved.
Behavior of membrane scaling during crossflow filtration in the anaerobic MBR system
(2006)
You, HS
;
Huang, CP
;
Pan, JR
;
Chang, SC
;
環境工程研究所
Fouling of membrane bioreactor (MBR) has been studied intensively. Because of the high concentration of carbonates, scaling can be a serious problem in anaerobic bioreactor, which attracts little attention. In this study, the wastewater was treated with an anaerobic process followed by either a submerged or a side-stream aerobic membrane reactor. The wastewater was spiked with calcium to investigate the effect of scaling on membrane filtration. Very little scaling was detected in the external membrane system (the side-stream MBR). Results from chemical cleaning of internal membrane system indicated that the flux decline caused by membrane scaling was far more severe than that by membrane fouling. However, the flux decline from membrane scaling can be effectively recovered by the chemical cleaning of EDTA and NaOCl. Fouling of membrane bioreactor (MBR) has been studied intensively. Because of the high concentration of carbonates, scaling can be a serious problem in anaerobic bioreactor, which attracts little attention. In this study, the wastewater was treated with an anaerobic process followed by either a submerged or a side-stream aerobic membrane reactor. The wastewater was spiked with calcium to investigate the effect of scaling on membrane filtration. Very little scaling was detected in the external membrane system (the side-stream MBR). Results from chemical cleaning of internal membrane system indicated that the flux decline caused by membrane scaling was far more severe than that by membrane fouling. However, the flux decline from membrane scaling can be effectively recovered by the chemical cleaning of EDTA and NaOCl.
Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
(2000-11-01)
Chiu, SY
;
Shieh, JM
;
Chang, SC
;
Lin, KC
;
Dai, BT
Gap-filling dynamics of several different species of additives for copper electrodeposition was investigated by monitoring the cross section of a partially filled copper profile on the scanning electron microscopy photo. The filling ration Deltay/Deltax between "bottom-up" with "sidewall shift" was found to be proportional to the filing power of additives. The adsorption-diffusion model combined with cathode polarization and cyclic voltammetric stripping measurements was employed to explain the attribution of additives in superfilling phenomena. The superfilling dynamics was achieved under behavior of additives providing selective inhibition gradient within the damascene feature. By means of those analyses, we have optimized the appropriate amount of additives and achieved the superfilling performance for 0.15 mum vias with aspect ratio 6 by an acid-copper electrolyte with polyethylene glycol, Cl-, and 2-mercaptopyridine (2-MP). Due to the additive of 2-MP, chelate formed which enhanced adsorption ability on Cu-0 surface, and the concentration gradient between side-wall shift and bottom-up in the damascene became high enough to attend superfilling electroplating. (C) 2000 American Vacuum Society. [S0734-211X(00)13506-1].
Dependence of luminescence efficiency on dopant concentration and sintering temperature in the erbium-doped Ba0.7Sr0.3TiO3 thin films
(2002-08-15)
Kuo, SY
;
Chen, CS
;
Tseng, TY
;
Chang, SC
;
Hsieh, WF
We found the dependence of luminescence efficiency on Er3+ concentration and sintering temperature in the Er-doped Ba0.7Sr0.3TiO3 (BST) thin films is governed by crystallinity and ion-ion interaction. X-ray diffraction and Raman studies of the sol-gel prepared samples show that the BST polycrystalline phase occurred when the sintering temperature reaches 700 degreesC, whereas, it becomes worse for temperature above 700 degreesC resulting from phase separation and the Er3+ concentration exceeding 3 mol % due to charge compensation mechanism. The observed green emission reaches maximum at sintering temperature 700 degreesC and 3 mol % Er3+ ions concentration. We also showed the Er dopant does not affect the dielectric property of BST thin films in C-V measurement and the Ba0.7Sr0.3TiO3 films doped with Er3+ ions may have potential use for electroluminescence devices. (C) 2002 American Institute of Physics.
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
(2002-05-01)
Lin, KC
;
Shieh, JM
;
Chang, SC
;
Dai, BT
;
Chen, CF
This work presents a novel leveler with low consumption and low diffusion that achieved defect-free filling in vias as small as 0.1 mum and generated as-deposited films with low resistivities. Experimental results indicate that the additive, 2-aminobenzothiazole (2-ABT), with benzyl and amino (-NH2) functional groups, is a desirable leveler. It produced a highly selective concentration gradient between the opening and the bottom of the feature. This novel leveler, with weaker adsorption, also reduced the consumption during copper electroplating, and eventually deposited a film with a high conductivity. (C) 2002 American Vacuum Society.
Enhancement of anaerobic digestion of waste activated sludge by alkaline solubilization
(1997-12-01)
Lin, JG
;
Chang, CN
;
Chang, SC
;
環境工程研究所
;
Institute of Environmental Engineering
The performance of an anaerobic digestion fed with waste activated sludge (WAS) pretreated with NaOH was examined The sludge was periodically collected from a municipal wastewater-treatment plant. The laboratory work was run in four I-I semi-continuous anaerobic digestion reactors. Reactor-A was fed with untreated WAS at 1% total solids (TS). The other three reactors, B, C and D, were respectively fed with WAS (1% TS) pretreated with 20 meq/l NaOH, WAS (1% TS) pretreated with 40 meq/l NaOH, and WAS (2% TS) pretreated with 20 meq/l NaOH. The reactors were operated at 35 degrees C at four hydraulic retention rimes - 20, 13, 10 and 7.5 days. The performances of reactors B, C and D, in terms of chemical oxygen demand (GOD), volatile solids (VS) removal, and gas production, were superior to that of reactor A. At a retention time of 10 days, the COD removals of reactors A, B, C and D were 38, 46, 51 and 52%, respectively. The gas productions of reactors B, C and D were, respectively, increased by 33, 30 and 163% over that of reactor A. The sludge dewaterability was examined by capillary suction rime (CST). The dewaterability of digested sludge was improved in reactors B, C and D. Capillary suction of digested sludges gave times in the range 148-389 s, compared with 309-735 s for undigested sludges. (C) 1997 Elsevier Science Ltd.
Growth and characterization of tungsten carbide nanowires by thermal annealing of sputter-deposited WCx films
(2004-09-20)
Wang, SJ
;
Chen, CH
;
Chang, SC
;
Uang, KM
;
Juan, CP
In this letter, the growth of dense W2C nanowires by a simple thermal annealing of sputter-deposited WCx films in nitrogen ambient is reported. Straight nanowires with a density of 250-260 mum(-2) and length/diameter in the range of 0.2-0.3 mum/13-15 nm were obtained from the 700degreesC-annealed samples, which exhibit good electron field emission characteristics with a typical turn-on field of about 1.7 V/mum. The self-catalytic growth of W2C nanowires is attributed to the formation of alpha-W2C phase caused by carbon depletion in the WCx films during thermal annealing. (C) 2004 American Institute of Physics.
High-selectivity damascene chemical mechanical polishing
(2006-03-01)
Chiu, SY
;
Wang, YL
;
Liu, CP
;
Chang, SC
;
Hwang, GJ
In this study, multi-step chemical mechanical polishing (CMP) with different copper removal rates and polishing pads is used to eliminate topography efficiently and to reduce micro-scratches on copper films. In colloidal-silica-based slurry, the polishing behaviors of copper, tantalum and silicon dioxide are found to relate to that kind of alkaline additives. The size of cations from alkaline additives influences the zeta potential of slurries, so as to vary the material removal rate. The addition of small-sized K+ from KOH provides high removal selectivity of tantalum/copper and oxide/copper, so as to benefit the reduction of copper dishing. (c) 2005 Elsevier B.V All rights reserved.
Hole states of X-Bi2Sr2CaCu2O8 [X=I, HgI2, and (Py-CH3)(2)HgI4] probed by OK-edge X-ray absorption spectroscopy
(2006-01-01)
Chen, JM
;
Chang, SC
;
Liu, RS
;
Lee, JM
;
Park, M
Hole states of X-Bi2Sr2CaCU2O8[X-Bi2212, X=I, HgI2, and (Py-CH3)(2)-HgI4, Py = pyridinel have been probed by O K-edge X-ray absorption near-edge structure (XANES) spectra. In the O 1s absorption edge of X-Bi2212, the pre-edge peak at similar to 528.3 eV is attributed to transitions into the 0 2p hole states located in the CuO2 planes. The hole concentration in the CuO2 planes of X-Bi2212 increases for X =I and HgI2, but decreases for X= (Py-CH3)(2)HgI4 as coMPared to pristine Bi2212. The variation of CuO2-plane hole concentration of Bi2212 is primarily responsible for the T-c variation upon intercalation. (c) 2005 Elsevier Ltd. All rights reserved.
Improving the quality of electroplated copper films by rapid thermal annealing
(2003-03-01)
Chang, SC
;
Shieh, JM
;
Dai, BT
;
Feng, MS
;
Wang, YL
The leveler, 2-mercaptopyridine (2MP), increases the filling power of copper electroplating electrolytes in plating 0.15 mum vias, but forms the plated copper metals of small-grained column structures with high resistivity. In this,study, we used rapid thermal annealing (RTA) to effectively improve the film quality. After RTA at 400 degreesC for 30 s, the resistivity of Cu deposits was reduced from similar to16.1 to similar to2.4 muOmegacm. Moreover, the Cu(111) intensity of Cu deposits increased after RTA annealing. (C) 2003 American Vacuum Society. [DOI: 10.1116/1.1562641].
Investigation of carrying agents on microstructure of electroplated Cu films
(2002-11-01)
Shieh, JM
;
Chang, SC
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Adding high molecular-weight polyethylene glycol (PEG) as a carrying agent benefits Cu electroplating from the viewpoint of an increase in both filling capability and films' conductivity, when plated in a lower current-density region. On electroplating in a higher current-density region, a gradually decreasing grain size from the top to bottom of Cu films occurs in the electrolyte without PEG or with PEG200. In comparison, sharp grains are formed for the mentioned multi-domain crystallization for those films deposited by the electrolyte containing PEG2000 or PEG6000 due to its lower surface tension which facilitates grain growth along the higher electric field. The used concentration of PEG was flexible due to the fact that the surface morphology, resistivity and deposition rate of deposited films remained almost unchanged over a wide PEG concentration range.
Investigation of overpotential and seed thickness on damascene copper electroplating
(2006-02-24)
Chen, KW
;
Wang, YL
;
Chang, L
;
Li, FY
;
Chang, SC
This study found that higher overpotential from higher plating current density and a thinner seed layer resulted in more incorporation of sulfur impurities into a deposited copper film. Our results suggested that the higher plating overpotential resulted in smaller copper grains with more grain boundaries where more impurities were trapped. To achieve a defect-free filling in vias, the optimization of the plating current density and the seed layer thickness was necessary. A copper seed with thickness less than 30 generated a sulfur-rich copper film, while, thickness larger than 200 nm for 0.13-nm technologies, the copper seed led to a poor gapfilling with a void after electroplating. (c) 2005 Elsevier B.V. All rights reserved.
Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
(2002-08-01)
Shieh, JM
;
Chang, SC
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
Complete filling of 0.13-mum vias and deposition of Cu with a low resistivity of about 2.3 muOmega(.)cm were obtained using an electrolyte with 2-aminobenzothiazole (2ABT) as the filling promoter. Due to the moderate charge transfer polarization characteristic realized by the addition of 2ABT, the film resistivity and the activation energy for thermal grain growth were similar to those for electrolytes without it. After rapid thermal annealing (RTA) at 400degreesC for 30 s, the resistivity was further reduced to similar to1.9 muOmega(.)cm.
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
(2001-05-01)
Chang, SC
;
Shieh, JM
;
Lin, KC
;
Dai, BT
;
Wang, TC
Through elucidating the effects of current density, cupric ion concentration, bath temperature, and air agitation on plating uniformity and filling capability of copper electroplating, the deposition of copper in an acid copper electrolyte will be illustrated to scale down to the sub-0.13 mum features with uniform plating, which is required by chemical mechanical polishing in current damascene techniques. In order to achieve the defect-free filling in sub-0.13 mum vias and trenches, the electrolyte must be composed of proper amounts of cupric ions, sulfuric acid, chloride ions, wetting agent, and filling promoter. The supplied current controlled at a lower current density, agitation acceded to the electroplating process were found as further keys. In the electrolyte, the filling promoter was consisted essentially of thiazole derivatives with benzyl groups and amino-group (-NH2) offering sufficient inhibition on copper depositing and selective inhibition gradient. Moreover, a lower resistivity film and higher filling capability could be obtained by using periodic pulse current plating as compared with direct current plating. (C) 2001 American Vacuum Society.
Investigations of pulse current electrodeposition for damascene copper metals
(2002-11-01)
Chang, SC
;
Shieh, JM
;
Dai, BT
;
Feng, MS
;
材料科學與工程學系
The influence of current density, duty cycle, and frequency of the applied pulse current on film qualities of electroplated copper was discussed. With various filled damascene structures, the corresponding filling power was optimized in a range of pulse current frequency. The optimized pulse current plating in conjunction with a leveler-free electrolyte resulted in a defect-free filling in approximate 100 nm damascenes and reduced the resistivity of Cu deposits. (C) 2002 American Vacuum Society.