Browsing by Author "Chang, ST"

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Chemical-mechanical polishing of low-dielectric-constant spin-on-glasses: film chemistries, slurry formulation and polish selectivity
(1997-10-31)
Wang, YL
;
Liu, C
;
Chang, ST
;
Tsai, MS
;
Feng, MS
Alkyl siloxane-based low-dielectric-constant (low-k) spin-on-glass (SOG) thin films with varying amounts of organic content were subjected to polishing experiments using silica-and ZrO2-based slurries with a variety of additives, As the amount of organic content in SOG increases, the chemical-mechanical polishing (CMP) removal rate decreases with silica-based potassium hydroxide-added slurry. On the other hand, zirconia-based slurry resulted in higher removal rates for both SOG (>400 nm/min) and thermal oxide and an adjustment in polish selectivity (related to thermal oxide) ranging from 1.2 to 9.1 can be achieved by adding various amounts of tetra-alkyl substituted ammonium hydroxide. Post-CMP materials characterization by Fourier transform infrared spectroscopy (FTIR) and atomic force microscopy (AFM) shows the chemical stability and CMP compatibility of SOG thin films. (C) 1997 Elsevier Science S.A.
Novel strategies of FSG-CMP for within-wafer uniformity improvement and wafer edge yield enhancement beyond 0.18 micro technologies
(2001)
Chen, KW
;
Wang, YL
;
Chang, L
;
Liu, CW
;
Lin, YK
The low-K films and higher multiple stacked layers would be widely applied for ultra large-scale integrated circuits [1][2]. However for 8" (200mm) or 12" (300mm) wafer the phenomena of wafer edge collapsing in higher interlayer low-K dielectric film causes from CMP polishing effect. (Shown in Fig. 1). Conventionally a amount of work has been developed in the optimization of different parameters, such as low pressure and high speed [3], metal dummy filling [4], harder pad used [4], and design of polishing head in order to resolve the problems. But these methods only engaged in design of experiment, not addressed in CMP theory of edge collapsing and controlling way. In this paper we will discuss the theory applied in Preston equation to explain the polishing behavior in wafer edge. In advance, to implement the theory, we adopted novel strategies, including of different polishing head (sweep) vibration and pad edge sprayer methods, even new wafer retaining ring design and novel delivery slurry methods in advance. The characteristics of within wafer nonuniformity and edge profile against CMP polishing low-k films, fluorinated silicate glass (FSG), would be evaluated in this new strategy action. Besides, the dimension of metal line and VIA, and edge die-yield can be directly responded to the edge profile improvement. From the action results, the average 7 similar to 10% yield improvement of 0.18 technology can be achieved, especially 15% edge-die yield improvement. The edge profile could promote the phenomena of no collapsing from the original 75 mm to 95 mm of wafer center-to-edge distance, excluding 3 mm edge of 8-inch wafer. These high efficient strategies for within-wafer planarization and edge profile is also proven and fulfilled with the reducing over 50% VIA CD deviation on the rule of lithography.
Performance evaluation of an API Aerosizer (TM)
(1998-08-01)
Tsai, CJ
;
Chein, HM
;
Chang, ST
;
Kuo, JY
;
環境工程研究所
A numerical method was developed to simulate the compressible flow field and particle trajectory in an API Aerosizer(TM). Experimental particle time-of-flights (tau(TOF)) data using mono-disperse solid and liquid particles were also obtained. Theoretical particle tau(TOF) results were compared with the present experimental data and those of Cheng er al. (1993, J. Aerosol Sci. 26, 501-514). Good agreement was found for solid particles. The original tau(TOF) calibration for the API Aerosizer(TM) was found to underestimate measured tau(TOF) mainly because of the assumption of one-dimensional flow in the nozzle, and incorrect use of the particle drag coefficient in the supersonic flow field. Effects of decreasing ambient pressure and increasing particle density on increasing tau(TOF) were found to be important. (C) 1998 Elsevier Science Ltd. All rights reserved.