Browsing by Author "Chang, Shan Wei"
Now showing 1 - 2 of 2
- Results Per Page
- Sort Options
Item type:Item, The CeO2 Sensing Membrane in Electrolyte-Insulator-Semiconductor for Bio-Sensor Applications(2014) ;Liu, Che Chun ;Lee, Ming Ling ;Chang, Kow Ming ;Chang, Shan WeiChen, HsiangIn the paper, the EIS structure with high-k CeO2 sensing film has more responsive to H+ relative to Na+ and K+. The CeO2 sensing membrane annealed with O-2 at 800 degrees C shows a higher sensitivity of 58.76 mV/pH, higher linearity, lower hysteresis voltage of 5.97 mV and lower drift rate of 0.96 mV/hr than the other conditions.Item type:Item, The Nitrogen Incorporated ZrO2 Charge Trapping Layers in Nonvolatile Memory Applications(2014) ;Lin, Chih Ju ;Lee, Ming Ling ;Chang, Kow Ming ;Chang, Shan WeiChen, HsiangIn the study, the MOHOS-type memory using ZrO2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900 degrees C can improve memory device performance, including larger C-V hysteresis, faster P/E speed, better data retention, and. smaller charge loss about 7.7%.