Browsing by Author "Chang, Sheng-Hsiung"

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A Creative 3D Game Platform Interacted with Laser Beam
(2013)
Chang, Sheng-Hsiung
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Chen, Chien-Yue
;
Lin, Bor-Shyh
;
Wu, Pei-Jung
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光電工程學系
In this study, a 3D display and interactive laser technology are integrated to develop an interface system with virtual touch and to build up a laser interactive 3D game platform.
Application of Block Diagonal Technique to a Hamiltonian Matrix in Performing Spin-splitting Calculations for GaN Wurtzite Materials
(2012-02-01)
Chen, Chun-Nan
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Chang, Sheng-Hsiung
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Su, Wei-Long
;
Wang, Wan-Tsang
;
Kao, Hsiu-Fen
The bulk inversion asymmetry (Dresselhaus) terms (i.e., B-2, B-1, and B'(1) terms) of wurtzite materials are determined. The 2 x 2 conduction band, 2 x 2 heavy-hole band, 2 x 2 light-hole band, and 2 x 2 crystal-field split-off hole band matrices of wurtzite semiconductors are developed and decoupled by using a block diagonal technique. Importantly, those 2 x 2 block diagonal matrices incorporate not only the interband coupling effect but also the bulk inversion asymmetry effect. Analytical expressions for the conduction and the valence band spin-splitting parameters and energies of GaN wurtzite materials are formulated by solving the block diagonal matrices. The presence of these terms is shown to include the spin-splitting phenomenon.
Multiband treatment of quantum transport in anisotropic semiconductors: Non-equilibrium Green's function
(2013-07-01)
Chen, Chun-Nan
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Chang, Sheng-Hsiung
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Su, Wei-Long
;
Jen, Jen-Yi
;
Li, Yiming
Using the non-equilibrium Green's function and anti-bonding orbital model, a multiband treatment of quantum transport in an anisotropic semiconductor (Si-based) system is developed. In this study, we adopt Chiang's boundary treatment of the open boundary system into the non-equilibrium Green's function framework, and then an easy and powerful multiband treatment method is developed to solve the transmission coefficient of Si-based semiconductor quantum structures. (C) 2012 Elsevier Ltd. All rights reserved.
Pathogenesis of acute hepatopancreatic necrosis disease (AHPND) in shrimp
(2015-12-01)
Lai, Hung-Chiao
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Ng, Tze Hann
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Ando, Masahiro
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Lee, Chung-Te
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Chen, I-Tung
Acute hepatopancreatic necrosis disease (AHPND), also called early mortality syndrome (EMS), is a recently emergent shrimp bacterial disease that has resulted in substantial economic losses since 2009. AHPND is known to be caused by strains of Vibrio parahaemolyticus that contain a unique virulence plasmid, but the pathology of the disease is still unclear. In this study, we show that AHPND-causing strains of V. parahaemolyticus secrete the plasmid encoded binary toxin PirAB(vp) into the culture medium. We further determined that, after shrimp were challenged with AHPND-causing bacteria, the bacteria initially colonized the stomach, where they started to produce PirAB(vp) toxin. At the same early time point (6 hpi), PirB(vp) toxin, but not PirA(vp) toxin, was detected in the hepatopancreas, and the characteristic histopathological signs of AHPND, including sloughing of the epithelial cells of the hepatopancreatic tubules, were also seen. Although some previous studies have found that both components of the binary PirAB(vp) toxin are necessary to induce a toxic effect, our present results are consistent with other studies which have suggested that PirB(vp) alone may be sufficient to cause cellular damage. At later time points, the bacteria and PirA(vp) and PirB(vp) toxins were all detected in the hepatopancreas. We also show that Raman spectroscopy "Whole organism fingerprints" were unable to distinguish between AHPND-causing and non-AHPND causing strains. Lastly, by using minimum inhibitory concentrations, we found that both virulent and non-virulent V. parahaemolyticus strains were resistant to several antibiotics, suggesting that the use of antibiotics in shrimp culture should be more strictly regulated. (C) 2015 Elsevier Ltd. All rights reserved.
Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductor
(2012-09-01)
Chen, Chun-Nan
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Chang, Sheng-Hsiung
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Su, Wei-Long
;
Jen, Jen-Yi
;
Li, Yiming
In contrast to the usual wavevector dependent transition coefficients, the velocity-direction dependent transition coefficients of an incident electron are calculated. Through a potential barrier grown on anisotropic semiconductors, the transition coefficients of an incident electron are calculated in all valleys and incident-directions. In the anisotropic semiconductor, the mathematical expressions of the electron wavevector are also derived in the framework of the incident-angle and incident-energy parameters.
Visible-Transparent Luminescent Solar Concentrators Based on Carbon Nanodots in the Siloxane Matrix with Ultrahigh Quantum Yields and Optical Transparency at High-Loading Contents
(2020-01-16)
Talite, Maria Jessabel
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Huang, Hsiu-Ying
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Cai, Kun-Bin
;
Co, King Chester Capinig
;
Santoso, Phoa Adelina Cynthia
Visible-transparent luminescent solar concentrators (VT-LSCs) can be integrated with solar cells for designing solar glasses. Recently, rare-earth complexes, semiconductor nanocrystals, and carbon nanodots (CNDs) have been applied in developing VT-LSCs. However, several challenges still existed, such as quantum yields (QYs) at high-loading contents, scattering/reabsorption losses, and stability. Here, highly luminescent and visible-transparent composites based on organosilane-functionalized CNDs (Si-CNDs) cross-linked in the siloxane matrix were prepared. The composites with a high-loading content (similar to 10 wt %) possess ultrahigh QYs of similar to 94% due to surface passivation, cross-linking-enhanced emission, and negligible inter-CND energy transfer. Moreover, they still appear exceptionally transparent and, thus, are suitable for VT-LSCs. Eco-friendly VT-LSCs without colored tinting were fabricated, yielding high internal and external quantum efficiencies of similar to 66% and similar to 3.9%. Our demonstration would pave a bright way for the utilization of eco-friendly VT-LSCs in solar glasses.