Browsing by Author "Chang, TF"

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Can emotional design change people's attitude on the web site?
(2005)
Chang, TF
;
傳播研究所
;
Institute of Communication Studies
In the past decades most HCl studies in web sites focused on cognitive aspects, their primary concern has been about; how to help users work more efficiently with computers. However, as Dillon argued people. must agree that much of what we do as humans is., driven by emotional and affective factors. There are, many studies providing evidence that emotion scan affect people's judgment. Since the interface design is clearly known, it will dominate a user's evaluation at first glance and influence the user's decision making while surfing on the web site. Emotional factor. certainly should be considered as an important,cue: when designing a web site. This research will discuss the relationship between emotion and a user's attitude and how does emotion induce certain attitude on a web site.
Diamond deposition on Si (111) and carbon face 6H-SiC (0001) substrates by positively biased pretreatment
(2002-03-01)
Chang, TF
;
Chang, L
;
材料科學與工程學系
;
Department of Materials Science and Engineering
The growth of textured diamond films on Si (111) and carbon face 6H-SiC (0001) has been achieved by positive bias-enhanced-nucleation in microwave plasma chemical vapor deposition. A bias voltage of + 100 to +300 V, 3% CH4 concentration in bias step, and 0.33% CH4 concentration in growth step were used to synthesize diamond films on Si and carbon face 6H-SiC. Highly oriented diamond films were observed by scanning electron microscopy and X-ray diffraction patterns. Cross-sectional transmission electron microscopy showed that the interface between diamond and Si substrate was smooth, while it was rough between diamond and SiC. It also showed that diamond films were directly grown on both substrates. (C) 2002 Elsevier Science B.V. All lights reserved.
Growth and characterization of chemical-vapor-deposited zinc oxide nanorods
(2006-03-01)
Wu, CL
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Chang, L
;
Chen, HG
;
Lin, CW
;
Chang, TF
ZnO nanorods were grown on Si substrates by metal-organic chemical vapor deposition (CVD). The ZnO nanorods were characterized by scanning electron microscopy, transmission electron microscopy (TEM), and X-ray diffraction. It was found that highly oriented ZnO single-crystalline nanorods were formed only on the substrate coated with a gold film. Without the gold, ZnO was deposited as a continuous film. No Au was observed on top of the ZnO nanorods, implying that the Au plays no role as catalytic metal in vapor-liquid-solid mechanism for formation of ZnO nanorods. In CVD, oriented ZnO nanorods along the c-axis were grown as a result of < 111 > textured Au. High-resolution TEM shows that the gold layer and ZnO are in orientation relationship of Au 111 planes//ZnO (0002) basal planes. (c) 2005 Elsevier B.V. All rights reserved.
Highly oriented diamond growth on positively biased Si substrates
(2001-12-01)
Chang, TF
;
Chang, L
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Deposition of highly textured diamond films on Si(001) has been achieved by using positively bias-enhanced nucleation in microwave plasma chemical vapor deposition. During the biasing period, an additional glow discharge due to the dc plasma effect appeared between the electrode and the substrate. The discharge is necessary for enhanced nucleation of diamond. X-ray diffraction, scanning electron microscopy, and cross-sectional transmission electron microscopy (XTEM) were used to characterize the microstructure of the diamond films on Si. The results show the morphology of diamond grains in square shape with strong diamond (001) texture. XTEM reveals that an amorphous interlayer formed on the smooth Si surface before diamond nucleation.
Highly oriented diamond growth on SixGe1-x (100) thin films
(2004-11-01)
Chang, TF
;
Chang, L
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Highly oriented (100) diamond films have been successfully grown on SixGe1-x(100) thin films by bias enhanced nucleation (BEN) in microwave plasma chemical vapor deposition (MPCVD) system. Raman spectra show the 1332 cm(-1) peak which proves the formation of diamond. Diamond nucleation density on SixGe1-x substrate estimated by scanning electron microscopy is higher than 10(9) cm(-2). The interface between diamond and SixGe1-x substrate was characterized by transmission electron microscopy (TEM). About 20 nm decrease in thickness of the SixGe1-x film. was observed after bias enhanced nucleation step. TEM shows the existence of silicon carbide and heteroepitaxial diamond grains grown on SixGe1-x substrate. Characterization from high-resolution TEM on the specimen of short time deposition reveals that a number of epitaxial diamond grains were directly nucleated on SixGe1-x with {111} interplanar spacing ratio of diamond and SixGe1-x of 2:3. The diamond nucleation is found to be preferred on the ridge position of the rough substrate surface. Diamond {100} facets were quickly developed in the early stage of growth. (C) 2004 Elsevier B.V. All rights reserved.
Resist-related damage on ultrathin gate oxide during plasma ashing
(1997-02-01)
Chien, CH
;
Chang, CY
;
Lin, HC
;
Chang, TF
;
Chiou, SG
This paper presents an important observation of plasma-induced damage on ultrathin oxides during O-2 plasma ashing by metal ''antenna'' structures with photoresist on top of the electrodes, It is found that for MOS capacitors without overlying photoresist during plasma ashing, only minor damage occurs on thin oxides, even for oxide thickness down to 4.2 nm and an area ratio as large as 10(4), In contrast, oxides thinner than 6 nm with resist overlayer suffer significant degradation from plasma charging, This phenomenon is contrary to most previous reports, It suggests that the presence of photoresist will substantially affect the plasma charging during ashing process, especially for devices with ultrathin gate oxides.
Resist-related damage on ultrathin gate oxide during plasma ashing
(1997-02-01)
Chien, CH
;
Chang, CY
;
Lin, HC
;
Chang, TF
;
Chiou, SG
This paper presents an important observation of plasma-induced damage on ultrathin oxides during O-2 plasma ashing by metal ''antenna'' structures with photoresist on top of the electrodes, It is found that for MOS capacitors without overlying photoresist during plasma ashing, only minor damage occurs on thin oxides, even for oxide thickness down to 4.2 nm and an area ratio as large as 10(4), In contrast, oxides thinner than 6 nm with resist overlayer suffer significant degradation from plasma charging, This phenomenon is contrary to most previous reports, It suggests that the presence of photoresist will substantially affect the plasma charging during ashing process, especially for devices with ultrathin gate oxides.
The role of a resist during O-2 plasma ashing and its impact on the reliability evaluation of ultrathin gate oxides
(1997-07-01)
Chien, CH
;
Chang, CY
;
Lin, HC
;
Chang, TF
;
Hsien, SK
Resists are regarded as protective layers for underlying devices during plasma ashing. In previous studies, resists were deliberately removed by a wet etching process prior to plasma exposure in an effort to achieve significant device degradation. In this paper we report that, contrary to conventional belief, devices with a resist overlayer actually suffer from more severe degradation than those without a resist covering. This resist-enhanced degradation effect, although not observed for devices with a thick gate oxide of 8 nm, becomes significant as the oxide thickness is scaled down below 6 nm. The most severe device degradation is found to be located at the center of the wafer and is found to increase with increasing antenna area ratio. Damage is also found to occur not during the overashing period, but primarily during the initial ashing stage when the resist is still on the electrodes. Using a combination of a simple equivalent capacitor circuit model and the self-adjustment behavior of potential between the wafer surface and substrate, good correlation with the experimental results is obtained.
The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
(1997-05-01)
Chien, CH
;
Chang, CY
;
Lin, HC
;
Chiou, SG
;
Huang, TY
During ashing process, resist has been intuitively regarded as a protection layer and deliberately removed in previous studies by wet process prior to plasma exposure in an effort to amplify the damage effect, Recently, we found instead that resist does not simply act as a protection layer, This newly observed phenomenon cannot be explained by the well-known electron shading effect which should not affect the area-intensive antenna structure used in our study, In this letter, we hypothesize that this resist-related charging damage is determined by the plasma potential adjustment difference between those devices with and without resist overlayer, The experimental results show a good correlation with our explanation, To be specific, severe antenna area ratio (ARR) dependent degradation of thin gate oxide is induced during the initial ashing stage while the resist is still on the electrodes, not during the overashing period.
The role of resist for ultrathin gate oxide degradation during O-2 plasma ashing
(1997-05-01)
Chien, CH
;
Chang, CY
;
Lin, HC
;
Chiou, SG
;
Huang, TY
During ashing process, resist has been intuitively regarded as a protection layer and deliberately removed in previous studies by wet process prior to plasma exposure in an effort to amplify the damage effect, Recently, we found instead that resist does not simply act as a protection layer, This newly observed phenomenon cannot be explained by the well-known electron shading effect which should not affect the area-intensive antenna structure used in our study, In this letter, we hypothesize that this resist-related charging damage is determined by the plasma potential adjustment difference between those devices with and without resist overlayer, The experimental results show a good correlation with our explanation, To be specific, severe antenna area ratio (ARR) dependent degradation of thin gate oxide is induced during the initial ashing stage while the resist is still on the electrodes, not during the overashing period.
Ultrafine platinum nanoparticles uniformly dispersed on arrayed CNx nanotubes with high electrochemical activity
(2005-07-12)
Sun, CL
;
Chen, LC
;
Su, MC
;
Hong, LS
;
Chyan, O
The structure and electrochemical properties of arrayed nitrogen-containing carbon nanotube (CN, NT)-platinum nanoparticle (Pt NP) composites directly grown on Si substrates have been investigated. The CN., nanotube arrays were grown by microwave-plasma-enhanced chemical vapor deposition first and then acted as the template and support for Pt dispersion in the following sputtering process. Under the same sputtering conditions, it was found that well-separated Pt NPs would form with an average diameter of 2 nm on the arrayed NTs while a continuous Pt thin film was observed on the bare Si substrate. X-ray photoelectron spectroscopy (XPS), X-ray diffraction, and electron microscopy were employed to study bonding and structure changes with increasing deposition time. Implications of the C1s and N1s bonding changes in XPS and their possible relation to the NT-Pt composite structures with self-limited size distribution are discussed. Cyclic voltammograms show well-behaved curves in methanol oxidation, suggesting an efficient electronic conduction mechanism from the substrate via CN, NTs to reach individual Pt NPs is in operation. Such an integrated nanocomposite approach possesses a high potential for micro direct methanol fuel cell applications.