Browsing by Author "Chang, Ting-"

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Charge storage characteristics of Mo nanocrystal dependence on Mo oxide reduction
(2008-12-01)
Lin, Chao-Cheng
;
Chang, Ting-
;
Tu, Chun-Hao
;
Chen, Wei-Ren
;
Hu, Chih-Wei
An oxygen incorporated Mo silicide was explored to form the Mo nanocrystals after rapid thermal annealing. Transmission electron microscopy showed the nanocrystals embedded in SiO(x). Charge storage characteristics of Mo nanocrystals influenced by the Mo oxide and the surrounding oxide were investigated through x-ray photoelectron spectroscopy and the electrical measurement. X-ray photoelectron spectra analyses revealed the redox reaction in the oxygen incorporated Mo silicide layer after rapid thermal annealing. The memory window and retention were improved due to reduction in Mo oxide.
NiSiGe nanocrystals for nonvolatile memory devices
(2009-02-09)
Hu, Chih-Wei
;
Chang, Ting-
;
Tu, Chun-Hao
;
Chiang, Cheng-Neng
;
Lin, Chao-Cheng
In this work, charge-storage characteristics of NiSiGe nanocrystal memory device have been studied. Transmission electron microscope shows that the annealed NiSiGe film has higher nanocrystal size and density distribution. Related material analyses such as x-ray photoelectron spectroscopy, Raman spectroscopy, and energy dispersive spectrometer were used to confirm that the Ge elements provide the additional nucleation centers and enhance the nanocrystals aggregation during thermal process. With the improved nanocrystal formation process, a remarkable improvement of the memory effect is observed by comparing the NiSi and NiSiGe nanocrystals. In addition, the retention characteristics of the nanocrystals memory devices have been discussed.