Browsing by Author "Chang, Ting- Chang"

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Effects of supercritical fluids activation on carbon nanotube field emitters
(2007-01-01)
Liu, Po-Tsun
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Tsai, Chih-Tsung
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Chang, Ting- Chang
;
Kin, Kon-Tsu
;
Chang, Pei-Lin
This paper proposes a novel method to enhance the emission characteristics of carbon nanotubes (CNTs). It is extremely possible for CNTs to adsorb moisture and other contaminants during the fabrication processes, leading to the degraded field emission characteristics. In., this work, CNT emitters are activated with commonly used heating process and supercritical carbon dioxide (SCCO2) fluids technology for removing adsorbed residue moisture. Experimental results have demonstrated that the electrical stability and field emission enhancement of CNT emitters are effectively achieved by the SCCO2 fluids treatment compared to the heating process, due to the minimization of residuary moisture in CNTs.
Electrical enhancement of solid phase crystallized poly-Si thin-film transistors with fluorine ion implantation
(2006)
Tu, Chun-Hao
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Chang, Ting- Chang
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Liu, Po-Tsun
;
Chen, Chih-Hung
;
Yang, Che-Yu
Solid phase recrystallized polycrystalline silicon thin-film transistors (SPC poly-Si TFTs) with fluorine ion implantation were investigated in this study. Electrical characteristics and reliability of the proposed poly-Si TFTs were improved effectively, especially for field effect mobility and off current. The fluorine-ion-implanted poly-Si TFT can suppress the hot carrier multiplication near the drain side, leading to superior endurance to electrical stress compared with conventional poly-Si TFTs. It was found that fluorine ions will pile up at the poly-Si interface during thermal annealing, without the initial deposition of pad oxide. The proposed technology is manageable and compatible with conventional poly-Si TFT fabrication. As the ion dosages increase more than 5x10(15) cm(-2), however, the electrical characteristics of poly-Si TFTs were degraded due to the increase of trap state density caused by the fluorine segregation in the poly-Si film.
Enhancement of brightness uniformity by a new voltage-modulated pixel design for AMOLED displays
(2006-09-01)
Lu, Hau-Yan
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Liu, Po-Tsun
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Chang, Ting- Chang
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Chi, Sien
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光電工程學系
This letter presents a new pixel design and driving method for active-matrix organic light-emitting diode (AMOLED) displays using low-temperature polycrystalline silicon thin-film transistors (TFTs). The proposed pixel circuit consists of five TFTs and one capacitor to eliminate the 'variation in the threshold voltage of the TFTs, and the drop in the supply voltage in a single frame operation by the source-follower-type connection and the bootstrap. The proposed pixel circuit has been verified to realize uniform output current by the simulation work using the HSPICE software. The novel pixel design has great potential for use in large-size and high-resolution AMOLED displays.
Improvement of hydrogenated amorphous-silicon TFT performances with low-k siloxane-based hydrogen silsesquioxane (HSQ) passivation layer
(2006-11-01)
Chang, Ta-Shan
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Chang, Ting- Chang
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Liu, Po-Tsun
;
Chang, Tien-Shan
;
Tu, Chun-Hao
A low-dielectric-constant (low-k)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarizatiow In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm(2)/V center dot s and a subthreshold swing of 0.68 V.