Browsing by Author "Chang, Tzu-Yueh"

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A Metal-Insulator-Semiconductor Solar Cell With High Open-Circuit Voltage Using a Stacking Structure
(2010-12-01)
Chang, Tzu-Yueh
;
Chang, Chun-Lung
;
Lee, Hsin-Yu
;
Lee, Po-Tsung
;
光電工程學系
A stacking metal-insulator-semiconductor (MIS) solar cell structure, which integrates an n-type MIS solar cell with a p-type MIS solar cell, is proposed to effectively enlarge the open-circuit voltage (V(oc)). The measured V(oc) is up to 0.71 V under simulated air mass 1.5 illumination (100 mW/cm(2)). This V(oc) is larger than those of the n-type or p-type MIS solar cells with or without surface passivation. In this letter, we successfully demonstrate the feasibility of the V(oc) enhancement of MIS solar cells by using a stacking structure.
Characteristics of MIS Solar Cells Using Sputtering SiO(2) Insulating Layers
(2010-01-01)
Chang, Tzu-Yueh
;
Chang, Chun-Lung
;
Lee, Hsin-Yu
;
Lee, Po-Tsung
;
光電工程學系
In this study, the characteristics of both p-type and n-ype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO(2) insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO(2) insulating layer and a hydrogen (H(2)) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO(2) insulating layer can be greatly enhanced by depositing a SiN(x) passivation layer on top. It suggests that a sputtering SiO(2) insulating layer is a good alternative insulating layer for MIS solar cells.
Characteristics of MIS Solar Cells Using Sputtering SiO2 Insulating Layers
(2010-01-01)
Chang, Tzu-Yueh
;
Chang, Chun-Lung
;
Lee, Hsin-Yu
;
Lee, Po-Tsung
;
光電工程學系
In this study, the characteristics of both p-type and n-ype Metal-Insulator-Semiconductor (MIS) solar cells with sputtering SiO2 insulating layers fabricated by radio-frequency (RF) magnetron sputtering are investigated. The characteristics of MIS solar cells are considerably affected by the thickness of the SiO2 insulating layer and a hydrogen (H-2) annealing process. Moreover, the performance of MIS solar cells with sputtering SiO2 insulating layer can be greatly enhanced by depositing a SiNx passivation layer on top. It suggests that a sputtering SiO2 insulating layer is a good alternative insulating layer for MIS solar cells.
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structure
(2010-01-25)
Chang, Tzu-Yueh
;
Cheng, You-Wei
;
Lee, Po-Tsung
;
光電工程學系
;
顯示科技研究所
The electrical properties of a device with an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO(3) nanoclusterlike layer interposed between the Alq(3) thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO(3) nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.
Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure
(2010-01-25)
Chang, Tzu-Yueh
;
Cheng, You-Wei
;
Lee, Po-Tsung
;
光電工程學系
;
顯示科技研究所
The electrical properties of a device with an Al/Alq(3)/nanostructured MoO3/Alq(3)/p(+)-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO3 nanoclusterlike layer interposed between the Alq(3) thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO3 nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.
Investigation of deposition rate effects on the current-voltage characteristics of organic dynamic random access bistable devices
(2007)
Chang, Tzu-Yueh
;
Chen, Szu-Yuan
;
Lee, Po-Tsung
;
光電工程學系
;
Department of Photonics
We, investigate organic dynamic random access bistable devices with A1/Alq(3)/n-type Si structure at different deposition rates. Each of them contains a heterostructure, and only two-layer deposition is needed in this structure. Current-voltage characteristic similar to that of metal/organic semiconductor/metal structure, the three-layer structure widely used for organic memory devices, is obtained. Moreover, we able to modify the electrical properties by utilizing appropriate deposition rates. This device shows extremely simple fabrication process and great potential in future advanced organic flexible display.
Investigation of electrical pulse erasing method effect on current - Voltage characteristics of organic bistable device
(2007)
Lee, Po-Tsung
;
Chang, Tzu-Yueh
;
Chen, Szu-Yuah
;
光電工程學系
;
Department of Photonics
The electrical characteristics of the organic bistable devices with Al/Alq(3)/n-type Si structure with an electrical pulse erasing method are investigated. The bistable characteristic similar to that of metal/organic semiconductor/metal structure is demonstrated as well. Furthermore, generation of extra defects at both interfaces introduces variations on the electrical behaviors when erasing voltage conditions are applied on the organic bistable device. This device shows extremely easy fabrication processes and great potential in future advanced organic display.
Organic thin-film transistors with AIN film as a gate-insulator by RFIICP sputtering
(2005-01-01)
Yen, Kuo-Hsi
;
Zan, Hsiao-Wen
;
Ko, Chueh-Ping
;
Liu, Pu-Kuan
;
Chang, Tzu-Yueh
We firstly fabricated the organic thin-film transistors with sputtered-AlN film as the gate insulator. The AlN film was deposited by the RF-ICP (Induced Couple Plasma) sputtering. The demonstrated pentacene based TFTs had on/off current ratio around 4 and mobility around 5x10(-4) cm(2)/Vs without any surface treatment and pentacene purification. All optimized conditions for this new proposed device were under processing.
Tuning of the electrical characteristics of organic bistable devices by varying the deposition rate of Alq(3) thin film
(2008-10-01)
Lee, Po-Tsung
;
Chang, Tzu-Yueh
;
Chen, Szu-Yuan
;
光電工程學系
;
顯示科技研究所
Organic bistable devices with an Al/Alq(3)/n-type Si structure are investigated at different deposition rates of Alq3 thin film. We can obtain current-voltage characteristics of these devices similar to those of metal/organic semiconductor/metal structures that are widely used for organic bistable devices. The bistable effect of the Al/Alq(3)/n-type Si structure is primarily caused by the interface defects at the Al/Alq(3) junction. Moreover, the electrical properties of these devices can be modified and controlled by utilizing the appropriate deposition rates of the Alq(3) thin film by thermal deposition. XPS, AFM, and GIXRD measurements are performed to characterize the properties of Alq(3) thin film and Alq(3)/Al interface. This type of devices involves an extremely simple fabrication process and offers great potential in future advanced organic electronics. (C) 2008 Elsevier B.V. All rights reserved.