Browsing by Author "Chang, Wei Ling"

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0.18 mu m SiGe BiCMOS Microwave/Millimeter-wave Dual-Mode Dual-Conversion Receiver Architecture With a Tunable RF Channel Selection at Low-Flicker-Noise Microwave Mode
(2017-01-01)
Chang, Wei Ling
;
Meng, Chinchun
;
Yang, Shih-Der
;
Huang, Guo-Wei
;
電機工程學系
A dual-mode receiver architecture with tens-MHz channel bandwidth at microwave mode and GHz channel bandwidth at millimeter-wave mode is demonstrated in this work with a tunable active filter for RF channel selection at microwave mode using 0.18 mu m SiGe BiCMOS technology. A dual conversion is employed to accommodate the wide-channel-bandwidth 60-GHz mode at the first conversion stage and the high-level-modulation 5-GHz mode is merged to the second conversion stage through sharing the 5-GHz switchable Gilbert IQ mixers with the 60-GHz mode. A tunable RF active filter is inserted between the 5-GHz LNA and the second stage mixer to serve as RF channel selection at the 5-GHz mode with the ability of relaxing the stringent linearity requirement imposed by high-level-modulation scheme. 10 dB gain with a 2-GHz channel bandwidth at the 60-GHz mode and 23 dB gain with a 20 MHz channel bandwidth within the 600 MHz tuning range at 5-GHz mode are demonstrated with a low-flicker-noise corner of less than 60 KHz at the 5-GHz mode because of the use of SiGe HBT as the IQ Gilbert mixer cores at the second conversion stage.
A Miniature 200-GHz Subharmonic Mixer With a Folded 180 degrees Hybrid Using Equal-Length Edge- and Broadside-Coupled Lines
(2018-04-01)
Chang, Wei Ling
;
Meng, Chinchun
;
電機工程學系
;
Department of Electrical and Computer Engineering
A miniature 180 degrees hybrid is proposed to demonstrate a 200-GHz subharmonic mixer (SHM) using a 0.18-mu m SiGe BiCMOS process. The reduced-size 180 degrees hybrid is achieved by folding the shared coupled lines between the in-phase power divider and the out-of-phase Marchand balun. The shared coupled lines demand an equal length design for the coupled lines at both Delta and Sigma ports of an 180 degrees hybrid. For the SHM, edge coupling for the Sigma section and broad-side coupling for the Delta section are employed to compensate the different input frequencies at Delta and Sigma ports. The SHM achieves a conversion gain around -21 dB from 175 to 200 GHz with 0-dBm LO pumping power. The LO-to-RF isolation is better than 32 dB within the operating bandwidth.
Analytical Noise Optimization of Single-/Dual-Band MOS LNAs With Substrate and Metal Loss Effects of Inductors
(2019-07-01)
Chang, Wei Ling
;
Meng, Chinchun
;
Ni, Jung-Hung
;
Ch, Kai-Chun
;
Chang, Chih-Kai
Analytical noise formulations and design optimization of single- and dual-band inductively source-degenerated MOS low-noise amplifiers (LNAs) with the substrate and metal loss effects of on-chip inductors are established in this paper. It reveals that the noise figures of both single-/dual-band LNAs degrade substantially under the consideration of the loss effects. However, by increasing the device size, the noise optimization methodology of simultaneous noise and input match for a single-band LNA still holds true with concern for the loss effects. For a dual-band LNA, analytical noise optimization for a balanced noise design is established for inductors with metal and substrate loss and indicates a larger device size. The substrate and metal loss effects of inductors can be mitigated using integrated passive device (IPD) process for the input match network. The demonstrated single-band 0.18-mu m MOS LNAs with and without IPD process show noise figures of 1.53 and 2.52 dB at 2.4 GHz, respectively. Subsequently, the implemented dual-band 0.18-mu m MOS LNAs with and without IPD process show noise figures of 1.6/2.6 and 3.25/4.1 dB at 2.4/5 GHz, respectively.
V-band Sub-Harmonic Gate-Pumped Resistive Mixer With a 180 degrees Hybrid Using an In-Phase Power Divider Merging With an Out-Of-Phase Marchand Balun
(2019-01-01)
Chang, Wei Ling
;
Meng, Chinchun
;
Huang, Guo-Wei
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A high isolation gate-pumped resistive sub-harmonic mixer with a miniature 180 degrees hybrid is demonstrated using 90 nm CMOS process. An in-phase power divider and an out-of-phase Marchand balun form a reduced-size 180 degrees hybrid with shared coupled lines. For a sub-harmonic mixer, the input matches at LO/RF ports of the 180 degrees hybrid are achieved using high/low coupling coefficients of the shared equal-length coupled lines. Moreover, isolations between RF and LO ports are achieved at all frequencies because a Marchand balun maintains balanced signals and a power divider provides in-phase equal magnitude signals at all frequencies. The sub-harmonic mixer achieves a conversion gain around 0-3 dB from 58-67 GHz with 0 dBm LO pumping power. The LO-to-RF isolation is better than 36 dB within the operating bandwidth.