Browsing by Author "Chang, Wen-Hsiung"

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Flexible One Diode-One Resistor Crossbar Resistive-Switching Memory
(2012-04-01)
Huang, Jiun-Jia
;
Hou, Tuo-Hung
;
Hsu, Chung-Wei
;
Tseng, Yi-Ming
;
Chang, Wen-Hsiung
We report the first demonstration of a flexible one diode-one resistor (1D1R) resistive-switching (RS) memory cell capable of high-density crossbar array implementation at an extremely low cost. A Ti/TiO2/Pt diode with a large rectifying ratio and a stable Ni/HfO2/Pt unipolar RS memory element have been fabricated on a polyimide substrate using only room-temperature processes. No significant degradation of the rectifying ratio of the TiO2 diode and the cycling variations, retention, and read disturb immunity of the HfO2 memory was observed in the bending state. The series 1D1R cell shows highly reproducible unipolar RS because of the low reset current of the HfO2 memory, which greatly mitigates the adverse effect of diode series resistance. Furthermore, the 1D1R cell can effectively suppress read interference and realize a crossbar array as large as 512 kbit. (C) 2012 The Japan Society of Applied Physics
Switching Mode and Mechanism in Binary Oxide Resistive Random Access Memory Using Ni Electrode
(2013-03-01)
Lin, Kuan-Liang
;
Hou, Tuo-Hung
;
Lee, Yao-Jen
;
Chang, Jhe-Wei
;
Lin, Jun-Hung
Resistive-switching (RS) modes in different CMOS-compatible binary oxides have been shown to be governed by the interplay with the Ni top electrode. Unipolar RS and metallic low-resistance state in polycrystalline HfO2 and ZrO2 are distinct from the preferential bipolar RS and semiconductive low-resistance state in amorphous Al2O3 and SiO2. Backside secondary ion mass spectrometry (SIMS) has shown the formation of Ni filaments in HfO2, in contrast to the formation of oxygen-vacancy filaments in Al2O3. The differences have been explained by strong dependence of Ni migration on the oxide crystallinity. Additionally, the RS mode can be further tailored using bilayer structures. The oxide layer next to the Si bottom electrode and its tendency of forming Ni filaments play significant roles in unipolar RS in the bilayer structures, in support of the conical-shape Ni filament model where the connecting and rupture of filaments for unipolar RS occur at the smallest diameter near the bottom electrodes. (c) 2013 The Japan Society of Applied Physics