Browsing by Author "Chang, X. Y."

Now showing 1 - 2 of 2

Device linearity comparison of uniformly doped and delta-doped In0.52Al0.48As/In0.6Ga0.4As metamorphic HEMTs (vol 27, pg 535, 2006)
(2006-10-01)
Lin, Y. C.
;
Chang, Edward Yi
;
Yamaguchi, H.
;
Hirayama, Y.
;
Chang, X. Y.
On the doping effects for linearity improvement of InGaP/InGaAs PHEMT
(2005)
Lin, Yueh-Chin
;
Chang, J. W.
;
Chang, Edward Yi
;
Chang, X. Y.
;
材料科學與工程學系
In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional delta-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.