Browsing by Author "Chang, Yu-Chia"

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Effect of doping metal ion on holographic storage characteristics of PQ/poly(hydroxyethyl methacrylate-co-methyl methacrylate) hybrids
(2007-01-01)
Cheng, Wei-Sheng
;
Whang, Wha-Tzong
;
Chang, Yu-Chia
;
Chen, Po-Lin
;
Hsiao, Yi-Nan
Holographic Storage Characteristics of PQ/poly(methyl methacrylate) have been significantly improved by doping metallic ion Yb+3 and Er+3. The hybrid materials display significant enhancement in the holographic 13 +3 characteristics. The diffraction efficiency promote to 59% with Yb+3, to 47% with Er from the undoped sample is 40%. The increment is up to 47% in Yb+3 sample; the dynamic range enhance to 2.12 and 1.58 on Yb+3 and Er+3 containing sample individually in comparison to 1.16 for the undoped copolymer. The increment of dynamic range is up to 82% for Yb+3 containing sample. The related mechanism of these changes is preliminary discussed with the analysis of UV-vis, FT-IR and Photoluminescence spectroscopy.
Effect of doping metal ion on holographic storage characteristics of PQ/poly(hydroxyethyl methacrylate-co-methyl methacrylate) hybrids - art. no. 66201K
(2007)
Cheng, Wei-Sheng
;
Whang, Wha-Tzong
;
Chang, Yu-Chia
;
Chen, Po-Lin
;
Hsiao, Yi-Nan
Holographic Storage Characteristics of PQ/poly(methyl methacrylate) have been significantly improved by doping metallic ion Yb+3 and Er+3. The hybrid materials display significant enhancement in the holographic 13 +3 characteristics. The diffraction efficiency promote to 59% with Yb+3, to 47% with Er from the undoped sample is 40%. The increment is up to 47% in Yb+3 sample; the dynamic range enhance to 2.12 and 1.58 on Yb+3 and Er+3 containing sample individually in comparison to 1.16 for the undoped copolymer. The increment of dynamic range is up to 82% for Yb+3 containing sample. The related mechanism of these changes is preliminary discussed with the analysis of UV-vis, FT-IR and Photoluminescence spectroscopy.
Effects of independent double-gated configuration on polycrystalline-Si nonvolatile memory devices
(2009-09-28)
Chen, Wei-Chen
;
Lin, Horng-Chih
;
Chang, Yu-Chia
;
Huang, Tiao-Yuan
;
電子工程學系及電子研究所
A polycrystalline-Si thin-film transistor configured with independent double-gated structure and ultrathin channel film is proposed for use as a Si-oxide-nitride-oxide-Si memory device. Taking advantage of additional control gate bias offered by the independent double-gated scheme in addition to the driving gate, this work demonstrated that the reading window and programming efficiency can be improved by applying a proper control gate bias. It is also found that the relationship between programming/erasing speed and control gate bias is strongly related to channel film thickness. Our results indicate that the independent double-gated device possesses promising potential for future nonvolatile memory applications. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3238362]
In Situ Doped Source/Drain for Performance Enhancement of Double-Gated Poly-Si Nanowire Transistors
(2010-07-01)
Chen, Wei-Chen
;
Lin, Horng-Chih
;
Chang, Yu-Chia
;
Lin, Chuan-Ding
;
Huang, Tiao-Yuan
A poly-Si nanowire (NW) thin-film transistor configured with the double-gated scheme was fabricated and characterized. The fabrication process features the clever use of selective plasma etching to form a rectangular NW underneath a hard mask. In this paper, we show that replacing the original ion-implanted poly-Si with in situ doped poly-Si for the source/drain significantly enhances the device performance, including steeper subthreshold swing (SS), larger on/off current ratio, and reduced series resistance. In particular, the SS is improved to a record-breaking low value of 73 mV/dec, which, to the best of our knowledge, is the most ideal ever reported for a poly-Si based device. The new NW transistors with such excellent switching properties are highly promising for reducing power consumption and operational voltage in practical circuit applications.