Browsing by Author "Chang, Yu-Lin"

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Real-time free viewpoint rendering system for face-to-face video conference
(2008)
Pan, Chia-Ho
;
Huang, Sheng-Chieh
;
Chang, Yu-Lin
;
Lian, Chung-, Jr.
;
Chen, Liang-Gee
Face-to-face communication experience plays an important role in videoconference applications. In this paper, we propose view angle rectification and view synthesis methods to generate the preferred view at observer\'s side. The proposed free viewpoint rendering system achieves face-to-face communication experience for real-time videoconference application.
"She is in a Bad Mood Now": Leveraging Peers to Increase Data Quantity via a Chatbot-Based ESM
(2019-01-01)
Chang, Yu-Lin
;
Chang, Yung-Ju
;
Shen, Chih-Ya
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資訊工程學系
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Department of Computer Science
The experience sampling method (ESM) is widely used for collecting in situ experiences in various domains. One known limitation, however, is its reliance on participants being receptive to ESM questionnaires at the sampled moments. At moments when participants cannot notice or respond to an ESM questionnaire, researchers cannot obtain a response. In this research, we explored the feasibility of inviting peers to provide information about participants in an ESM study. Results from a two-week experiment with a total of 27 participants and 82 peers showed that including peers' ESM responses increased ESM data quantity. Furthermore, the agreement between the peers' and the participants responses could be maintained by asking peers' confidence. Even considering only data with high confidence could increase data quantity. Moreover, inviting peers had a positive impact on the participant's compliance to respond. These results suggest that using peer ESM to obtain more in-situ data about participants is promising.
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
(2009-05-01)
Huang, Hsin-Hsiung
;
Chao, Chu-Li
;
Chi, Tung-Wei
;
Chang, Yu-Lin
;
Liu, Po-Chun
A 300 pm GaN thick-film, in diameter 1.5 in, was demonstrated without any crack by hydride vapor phase epitaxy (HVPE) growth. The technique used in relaxing the residual stress caused by differences of thermal expansion coefficients (TEC) and lattice constants between GaN and sapphire substrate to prevent GaN film from crack is called a dot air-bridged structure. After the laser lift-off process, 300-mu m-thick freestanding GaN wafer, in diameter 1.5 in, could be fabricated. The compressive stress in the dot air-bridged structure was measured by micro-Raman spectroscopy with the E(2)(high) phonon mode. The compressive stress could be reduced to as small as 0.04 GPa, which could prevent the crack during the epitaxial process for GaN growth by HVPE. It is important to obtain a large-area crack-free GaN thick-film, which can be used for fabricating freestanding GaN wafer. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.