Browsing by Author "Chang, YuWen"

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11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique
(2008-10-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated rot 4.1-11.8 GHz. In this experiment, et conventional static,frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f(T) and optimizing the I(read)/I(latch) tire maximum operating frequency of the HLO-FF is greatly improved date to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA cot the supply voltage of 5V. (C) 2005 Wiley Periodicals, Inc.
Broadband GaInP/GaAs HBT regenerative frequency divider with active loads
(2007)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz-26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min) ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7mW at the supply voltage of 5 V. The chip size is 1.0 x 1.0 mm(2).
High-speed divide-by-4/5 prescalers with merged and gates using gainp/gaas hbt and sige hbt technolmes
(2008-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Lin, Yi-Chen
;
Huan, Guo-Wei
This paper demonstrates the divide-by-4/5 prescalers with merged AND gates in 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35-mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(T)), the maxinnun operating frequency of a D-type flip-flop can be promoted. At the supply, voltage of 5 the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1-8 GHz at the cost of power consumption. (c) 2008 Wiley Periodicals, Inc.