Browsing by Author "Chang Chi-Shin"

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Static random access memory with ripple bit lines/search lines for improving current leakage/variation tolerance and density/performance
(2014-07-08)
Chuang Ching-Te
;
Yang Hao-I
;
Lu Chien-Yu
;
Chen Chien-Hen
;
Chang Chi-Shin
A static random access memory includes a pre-charger, a first cell column array/peripheral circuit, and a first ripple buffer. The pre-charger is connected to a first local bit line in order to pre-charge the first local bit line. The first cell column array/peripheral circuit is connected to the first local bit line and has a plurality of cells for temporarily storing data. The cells are connected to the first local bit line. The first ripple buffer is connected to the first local bit line and a second local bit line in order to send the data from the first local bit line to the second local bit line.