Browsing by Author "Chang Chia-Hua"

Now showing 1 - 12 of 12

EMBEDDED INDUSTRIAL CONTROLLER WITH BICYCLE FRAME SHAPE
(2013-11-14)
Tseng Yung-Sheng
;
Shih Ching-Wei
;
Jeng Shyr-Long
;
Chang Edward-Yi
;
Chang Chia-Hua
An embedded industrial controller with a bicycle frame shape is disclosed. The embedded industrial controller includes a casing with the bicycle frame shape having an upper tube, a lower tube, a front fork, a rear lower fork, a rear upper fork and a base tube, a motherboard, a battery module, a power electrical port and a plurality of input and output electrical ports. The embedded industrial controller with a bicycle frame shape of the present invention has significantly improved functions than the conventional industrial controller, and further meets the conventional requirements such as dust proof, vibration proof, and heat dissipation.
ENHANCEMENT-MODE HIGH-ELECTRON-MOBILITY TRANSISTOR AND THE MANUFACTURING METHOD THEREOF
(2012-09-20)
CHANG EDWARD YI
;
Chang Chia-Hua
;
Lin Yueh-Chin
This invention discloses an enhancement-mode high-electron-mobility transistor and the manufacturing method thereof. The transistor comprises an epitaxial buffer layer on a substrate, a source and drain formed in the buffer layer, a PN-junction stack formed on the buffer layer and located between the source and drain, and a gate formed on the PN-junction stack, wherein the PN-junction stack is composed of alternating layers of a P-type semiconductor and an N-type semiconductor.
ION SENSOR FOR MEASURING ION CONCENTRATION OF A SOLUTION
(2012-03-01)
Yu Peichen
;
Chen Bing-Mau
;
Chang Chia-Hua
;
Hsu Min-Hsiang
;
Huang Chan-Hung
An ion sensor includes: a conductive base structure including a substrate and an electrode film formed on the substrate; a plurality of ion-sensitive nanorods protruding from the electrode film; and an encapsulant enclosing the conductive base structure, surrounding the ion-sensitive nanorods, and formed with a window for exposing the ion-sensitive nanorods. Each of the ion-sensitive nanorods has a conductive core and an ion-sensitive layer formed on and enclosing the conductive core. The ion-sensitive material exhibits an ion selectivity of absorbing an ion of interest thereon for inducing a surface potential corresponding to concentration of the ion of interest.
Ion sensor for measuring ion concentration of a solution
(2013-04-30)
Yu Peichen
;
Chen Bing-Mau
;
Chang Chia-Hua
;
Hsu Min-Hsiang
;
Huang Chan-Hung
An ion sensor includes: a conductive base structure including a substrate and an electrode film formed on the substrate; a plurality of ion-sensitive nanorods protruding from the electrode film; and an encapsulant enclosing the conductive base structure, surrounding the ion-sensitive nanorods, and formed with a window for exposing the ion-sensitive nanorods. Each of the ion-sensitive nanorods has a conductive core and an ion-sensitive layer formed on and enclosing the conductive core. The ion-sensitive material exhibits an ion selectivity of absorbing an ion of interest thereon for inducing a surface potential corresponding to concentration of the ion of interest.
Method for fabricating a GaN-based thin film transistor
(2013-04-16)
Chang Yi
;
Chang Chia-Hua
;
Lin Yueh-Chin
A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode.
METHOD FOR FABRICATING A GaN-BASED THIN FILM TRANSISTOR
(2012-05-17)
Chang Yi
;
Chang Chia-Hua
;
Lin Yueh-Chin
A method for fabricating a GaN-based thin film transistor includes: forming a semiconductor epitaxial layer on a substrate, the semiconductor epitaxial layer having a n-type GaN-based semiconductor material; forming an insulating layer on the semiconductor epitaxial layer; forming an ion implanting mask on the insulating layer, the ion implanting mask having an opening to partially expose the insulating layer; ion-implanting a p-type impurity through the opening and the insulating layer to form a p-doped region in the n-type GaN-based semiconductor material, followed by removing the insulating layer and the ion implanting mask; forming a dielectric layer on the semiconductor epitaxial layer; partially removing the dielectric layer; forming source and drain electrodes; and forming a gate electrode.
Method for forming T-shaped gate structure
(2013-05-07)
Chang Edward Yi
;
Huang Lu-Che
;
Chang Chia-Hua
;
Lin Yueh-Chin
;
Chieng Wei-Hua
A method for forming a T-shaped gate is provided. The method includes providing a substrate. Then, a photoresist structure is formed over the substrate. The photoresist structure includes two development rates. Next, a mask with an opening is formed over the photoresist structure to pattern the photoresist structure. An angle exposure is applied to the photoresist structure, and the exposed photoresist structure is developed to form a T-shaped notch. A width of the T-shaped notch is gradually reduced from a top portion thereof to a bottom portion to expose a surface of the substrate. Then, a gate metal is deposited in the T-shaped notch. Thereafter, the patterned photoresist structure is removed to form the T-shaped gate.
Method of forming thin-film structure by oblique-angle deposition
(2011-08-16)
Chang Chia-Hua
;
Yang Chin-Sheng
;
Chiu Ching-Hua
;
Yu Pei-Chen
;
Kuo Hao-Chung
A method of forming thin-film structure by oblique-angle deposition is provided. The method includes the steps of: evaporating target source in a chamber by an electron beam evaporation system, and introducing process gas into the chamber and adjusting tilt angle of the evaporation substrate and controlling temperature in the chamber during evaporation to form thin-film on a evaporation substrate by oblique-angle deposition, and then annealing the evaporation substrate to form a thin-film having porous nanorod microstructure.
Semiconductor device
(2014-05-27)
Chang Yi
;
Chang Chia-Hua
;
Lin Yueh-Chin
;
Chen Yu-Kong
;
Shie Ting-En
A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(2013-06-20)
Chang Edward Yi.
;
Lin Yueh-Chin
;
Chang Chia-Hua
;
Trinh Hai-Dang
The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.
Sun-chasing device
(2014-05-27)
Sie You-Long
;
Chang Edward Yi
;
Jeng Shyr-Long
;
Chieng Wei-Hua
;
Lue Bin-Han
A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.
SUN-CHASING DEVICE
(2013-11-21)
Sie You-Long
;
Chang Edward-Yi
;
Jeng Shyr-Long
;
Chieng Wei-Hua
;
Lue Bin-Han
A sun-chasing device is provided, including a base, a first transmitter disposed on the base, a second transmitter, a support, a carrier pivotally connected to the support for carrying a solar module, a first supporting component pivotally connected to the first transmitter and the carrier, and a second supporting component pivotally connected to the second transmitter and the carrier. The sun-chasing device has great rigidity and carrying ability against strong wind, and has great precision and rotation angle, such that a solar plate can precisely aim at sun for long time and thus the efficiency of a solar module is significantly increased.