Browsing by Author "Chang Edward Yi."

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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
(2013-06-20)
Chang Edward Yi.
;
Lin Yueh-Chin
;
Chang Chia-Hua
;
Trinh Hai-Dang
The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a III-V semiconductor layer; an aluminum oxide layer formed on the III-V semiconductor layer; and a lanthanide oxide layer formed on the aluminum oxide layer. The method of manufacturing a semiconductor device includes: forming an aluminum oxide layer between a III-V semiconductor layer and a lanthanide oxide layer so as to prevent an inter-reaction of atoms between the III-V semiconductor layer and the lanthanide oxide layer.