Browsing by Author "Chao, T"

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Characterization of CF4-plasma fluorinated HfO2 gate dielectrics with TaN metal gate
(2005-05-30)
Lai, CS
;
Wu, WC
;
Wang, JC
;
Chao, T
;
物理研究所
In this paper, fluorine incorporation into the HfO2 gate dielectrics by post CF4 plasma treatment was proposed to improve the electrical characterization. TaN-HfO2-p-Si capacitors were demonstrated in this work. The characteristics of fluorinated HfO2 gate dielectrics were improved, including the capacitance-voltage hysteresis and current-voltage behaviors. This may be attributed to the fluorine incorporated into the HfO2 gate dielectrics as revealed by secondary ion mass spectroscopy. Moreover, the formation of Hf-F bonding was observed through electron spectroscopy for chemical analysis spectra. (c) 2005 American Institute of Physics.