Browsing by Author "Chao, Wei-Kuang"

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Dependence of the Noise Behavior on the Drain Current for Thin Film Transistors
(2014-02-01)
Tai, Ya-Hsiang
;
Chang, Chun-Yi
;
Hsieh, Chung-Lun
;
Yang, Yung-Hsuan
;
Chao, Wei-Kuang
In this letter, a noise formula is newly proposed to calculate the low frequency noise for the three kinds of amorphous silicon, low temperature polycrystalline silicon, and amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs). It is found that the noise behavior of the TFT depends on its drain current in a simple manner. Based on the analysis, the ratios of drain current to the noise level for these TFTs are compared. It reveals that a-IGZO TFT is the best candidate to be used in the active pixel sensor.