Browsing by Author "Chao, Wen-Chan"

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Higher Drive Current for SiGe Nanowires
(2008)
Chang, Kow-Ming
;
Kuo, Jiun-Ming
;
Wu, Heng-Hsin
;
Tzeng, Wen-Hsien
;
Wu, Tzu-liu
Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the Poly-Si and SiGe nanowire with Ge = 7% and 11 % respectively by side-wall spacer technique. In order to normalize the drive current of nanowires, we consider the nanowire as a resistance. The conductance Is chose for comparison between the nanowires. The higher conductance achieved of SlGe nanowire with/without nanowire implantation and the SlGe nanowire with higher Ge concentration had higher conductance. However, the disadvantage of lower contact resistance Is found in SiGe pad. The 3-amino-propyltriethoxy-silane (APTES) was used to modify the surface, which can detect the charge with different pH. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not Increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.
The Ge Enhance the Sensitivity for Bio-Sensor
(2008)
Chang, Kow-Ming
;
Kuo, Jiun-Ming
;
Chao, Wen-Chan
;
Liang, Chia-Jung
;
Wu, Heng-Hsin
Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire Increases owing to APTS with positive charge. The his (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.