Browsing by Author "Chao, Y. P."

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Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash Memory
(2010)
Chou, Y. L.
;
Chiu, J. P.
;
Ma, H. C.
;
Wang, Tahui
;
Chao, Y. P.
A novel random telegraph signal (RTS) method is proposed to study the lateral spread of injected charges in program/erase of a NOR-type SONOS flash memory. The concept is to use RTS to extract an interface trap position and to detect a local potential variation near the trap due to injection of program/erase charges. By using this method, we find that CHISEL program has a broader charge distribution than CHE program. A mismatch of CHE program electrons and band-to-band erase holes is observed directly from this method.