Browsing by Author "Chao, Yen-Cheng"

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Atomic layer deposition of epitaxial ZnO on GaN and YSZ
(2007-01-01)
Lin, Chih-Wei
;
Ke, Dong-Jie
;
Chao, Yen-Cheng
;
Chang, Li
;
Liang, Mei-Hui
ZnO thin films were epitaxially grown by atomic layer deposition on both of GaN/c-sapphire and yttria-stabilized zirconia (YSZ) substrates for comparison. X-ray diffraction, cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements show that epitaxial ZnO films have better structural qualities and optical properties on GaN than on YSZ, whereas atomic force microscopy (AFM) shows that the surface of ZnO films on YSZ is smoother than on GaN. From the ZnO thickness measured by TEM, the growth rate of ZnO on GaN is about one (0 0 0 2) monolayer per cycle, which is roughly four times of that on YSZ. (c) 2006 Elsevier B.V. All rights reserved.
Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate
(2007-01-01)
Chao, Yen-Cheng
;
Lin, Chih-Wei
;
Ke, Dong-Jie
;
Wu, Yue-Han
;
Chen, Hou-Guang
ZnO growth on yttria-stabilized zirconia (YSZ) (I 1 1) single-crystal substrate has been carried out by metalorganic chemical vapor deposition (MOCVD). High-quality epitaxial ZnO has been evidenced by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Cross-sectional TEM from all deposited films reveals that the interface between ZnO and YSZ is atomically flat, and orientation relationship is deduced to be [1 (1) over bar 100](ZnO//)[11 (2) over bar](YSZ,) (2 (1) over bar(1) over bar0)(ZnO)//[001](YSZ) and (0 0 0 2)(ZnO)//(111)(YSZ). It has been found that surface roughness increases with the substrate temperature in the range of 500-700 degrees C. The growth rate also varies with the temperature. (c) 2006 Elsevier B.V. All rights reserved.