Browsing by Author "Chao, Yi-Kai"

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In-Plane Gate Transistors for Photodetector Applications
(2013-06-01)
Liao, Yu-An
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Lin, Wei-Hsun
;
Chao, Yi-Kai
;
Chang, Wen-Hao
;
Chyi, Jen-Inn
In-plane gate transistors (IPGTs) with 20-mu m channel widths are fabricated on samples with n-(InGa)As sheet resistance embedded in undoped GaAs matrix. A trade-off between effective current modulation and high saturation drain current is obtained by optimizing the doping density of the sheet resistance. The mechanism responsible for the transistor behaviors of the devices is due to the channel electron depletion related to the population of mobile surface electrons under different gate biases. The photocurrent measurements demonstrate that the IPGT architecture is a feasible approach for the applications of photodetectors.
In-Plane Gate Transistors With a 40-mu m-Wide Channel Width
(2012-08-01)
Chung, Tung-Hsun
;
Lin, Wei-Hsun
;
Chao, Yi-Kai
;
Chang, Shu-Wei
;
Lin, Shih-Yen
An in-plane gate transistor with a GaAs/AlGaAs 2-D electron-gas channel about 40 mu m in width is investigated. The saturation region and the drain current modulation at different gate bias voltages are observed despite the wide channel. The surface-induced channel depletion is suggested as the main mechanism for the turn-off of the drain current at -10 V gate bias.
Memory device application of wide-channel in-plane gate transistors with type-II GaAsSb-capped InAs quantum dots
(2013-09-30)
Liao, Yu-An
;
Chao, Yi-Kai
;
Chang, Shu-Wei
;
Chang, Wen-Hao
;
Chyi, Jen-Inn
We demonstrate room-temperature electron charging/discharging phenomena of InAs quantum dots using wide-channel in-plane gate transistors. The device based on type-II GaAsSb-capped InAs quantum dots exhibits both the longer charging and discharging times than those of the type-I counterpart with GaAs capping layers. The slow charge relaxation of GaAsSb-capped InAs quantum dots and simple architecture of in-plane gate transistors reveal the potential of this device architecture for practical memory applications. (C) 2013 AIP Publishing LLC.